Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-20T23:06:59.735Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

Published online by Cambridge University Press:  15 February 2011

M. Fernandez ,
T. Rodriguez ,
A. Almendra ,
J. Jimenez-Leube  and
H. Wolters
M. Fernandez
Affiliation:
Inst. Materiales (CSIC) - 28006 Madrid (Spain)
T. Rodriguez
Affiliation:
ETSI Telecomunicacion - 28040 Madrid (Spain)
A. Almendra
Affiliation:
ETSI Telecomunicacion - 28040 Madrid (Spain)
J. Jimenez-Leube
Affiliation:
ETSI Telecomunicacion - 28040 Madrid (Spain)
H. Wolters
Affiliation:
CFN - Lisboa (Portugal)
Get access

Abstract

Iridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar atmosphere. The oxygen effect is to slow down the silicide formation and eventually to stop it. In all the cases, the oxygen piled-up at the iridium-iridium silicide interface. No distinguishable phase was formed by RTA in an Ar atmosphere. No oxygen contarsi'nation was detected when the RTA was performed under a vacuum lower than 2×10−5 Torr. In this case Ir1Si1 and Ir1Si1.75 phases were formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 325
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tsaur, B., Weeks, M.M., Trubiano, R. and Pellegrini, P.W., IEEE Elect. Dev. Lett. 9, 650 (1988)Google Scholar
2. Tsaur, B., Chen, C. K. and Nechay, B.A., IEEE Elect. Dev. Lett. 11, 415 (1990)Google Scholar
3. Petersson, S., Baglin, J., Hammer, W., d'Heurle, F., Kuan, T.S., Ohdomari, I., Pires, J. de Sousa and Tove, P., J. Appl. Phys. 50, 3357 (1979)Google Scholar
4. Tsaur, B., Weeks, M.M. and Pellegrini, P.W., IEEE Elect. Dev. Lett. 9, 100 (1988)Google Scholar
5. Ponpon, J.P. and Saulnier, A., Semicond. Sci. Tech. 4, 526 (1989)Google Scholar
6. Dimitriadis, C.A., Polychroniadis, E.K., Evangelou, E.K. and Giakoumakis, G.E., J. Appl. Phys. 70, 3109 (1991)Google Scholar
7. Ritcher, F., Bugiel, E., Eezgräber, H.B. and Pankin, D., J. Appl. Phys. 72, 815 (1992)Google Scholar