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Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

  • P. J. Drevinsky (a1), C. E. Caefer (a1), S. P. Tobin (a2), J. C. Mikkelsen (a3) and L. C. Kimerling (a4)...

Abstract

Introduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 1015 to 7 × 1017 cm−3. Initial results are described for samples with measured carbon content varying from 2 × 1015 to 6 × 1016 cm−3. Competing defect reactions involving the interstitial defects, Bi and Ci, and oxygen, boron, and carbon are observed. The identities of an electron trap (Bi-Oi) and a hole trap (Bi-Bs) have been clarified.

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Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

  • P. J. Drevinsky (a1), C. E. Caefer (a1), S. P. Tobin (a2), J. C. Mikkelsen (a3) and L. C. Kimerling (a4)...

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