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The Influence of Non-Stoichiometry on the Electrical Activation of n-Type Dopants in InP

Published online by Cambridge University Press:  26 February 2011

M. C. Ridgway ,
C. M. Johnson  and
P. KringhØj
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
C. M. Johnson
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
P. KringhØj
Affiliation:
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark
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Abstract

The influence of implantation-induced non-stoichiometry on the electrical activation and depth distribution of Group IV (Ge and Sn) and VI (Se and Te) elements in InP has been investigated with a variety of analytical techniques. Electrical measurements indicate that P co-implantation can increase the electrical activation of the Group IV elements through reductions in amphoteric behaviour and dopant-defect complexes for Ge and Sn, respectively. The relative influence of P co-implantation increases as the dopant ion dose increases. Though others have demonstrated that co-implantation increases the electrical activation of Group II elements, similar observations were not apparent for Group VI elements, the latter attributed to the lack of Group VI element interstitial character.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 683
Copyright
Copyright © Materials Research Society 1995

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References

[1] Dodabalapur, A. and Streetman, B.G., in Proceedings of the Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors, eds. Pearton, S.J., Jones, K.S. and Kapoor, V.J. (The Electrochemical Society, New Jersey, 1990) p. 66.Google Scholar
[2] Ridgway, M.C., Jagadish, C., Thompson, T.D. and Johnson, S.T., in Proceedings of IPRM 1992 (IEEE, New York, 1992) p. 56.Google Scholar
[3] Ridgway, M.C. and Kringhøj, P., in III-V Electronic and Photonic Device Fabrication and Performance, eds. Jones, K.S., Pearton, S.J. and Kanber, H. (Mat. Res. Soc., Pittsburgh, 1993) p. 351.Google Scholar
[4] Ridgway, M.C., Kringhøj, P. and Johnson, C.M., Nucl. Instrum. Meth. B96, 311 (1995).Google Scholar
[5] Kringhøj, P., Appl. Phys. Lett. 64, 351 (1994).Google Scholar
[6] Ridgway, M.C. and Kringhøj, P., J. Appl. Phys. 77, 2375 (1995).Google Scholar
[7] Kringhøj, P. and Weyer, G., Appl. Phys. Lett. 62, 1973 (1993).Google Scholar
[8] Xiao, Q.F., Hashimoto, S., Gibson, W.M. and Pearton, S.J., Nucl. Instrum. Meth. B45, 464 (1990).Google Scholar
[9] Kringhøj, P., J. Appl. Phys. 71, 1748 (1992).Google Scholar
[10] Reiss, H., Fuller, C.S. and Morin, F.J., Bell Syst. Tech. J. 35, 535 (1956).Google Scholar
[11] Hannay, N.B., Solid State Chemistry (Prentice-Hall, New Jersey, 1967) p. 120.Google Scholar