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The Influence of Nitrogen Content on the Properties of Sputtered a-Si56Ge44:N:H Films
Published online by Cambridge University Press: 21 February 2011
Abstract
Nitrogen related absorption bands of the IR spectra are used to determine the content of nitrogen and N—H bonds in a—Si56 Ge44 films. A preferential attachment of nitrogen to silicon is observed. Nitrogen incorporation enhances the normalized photoconductivity to 5 · 107 cm2/V at maximum. This is related to N—H complexes acting as donors. A correlation between optical gap and single oscillator energy is reported.
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- Research Article
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- Copyright © Materials Research Society 1991