We have investigated the influence of nitrogen incorporation into the HfAlO x film prepared by LL-D&A process with NH3 annealing step on structural change and electrical properties. Also, we have evaluated the effects of PDA treatment on electrical properties. Nitrogen concentration in HfAlO x (N) film was enhanced with increasing the NH3 annealing temperature. The shift of Hf 4f average binding energy towards lower side was observed in proportion to nitrogen concentration in HfAlO x (N) film. This result indicates the partial change of the local coordination from O-Hf-O to O-Hf-N. The increase of O-Hf-N component drastically degraded the gate leakage current in HfAlO x (N) film. Nitrogen atoms still maintained in HfAlO x (N) film even after PDA at 850°C in O2 ambient. PDA treatment at higher temperature after D&A(NH3) process improved the flat-band voltage shift and the electron mobility.