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The Influence of Ion Beam Implantation on Electrical Properties of Polycrystalline MnNiCuFeO

  • Li Binbin (a1), Tan Hui (a1), Han Ying (a1), Tao Wei (a2) and Lin Chenglu (a2)...

Abstract

Polycrystalline MnNiCuFeO was implanted by B+, P+ and Si+ ion beams and thermally annealed. The structure and electrical properties of the sample were measured using SEM, Microprobe (MP), Low Frequency Impedance Analyzer (LFIA) and Spreading Resistance Probe (SRP). The results show that the resistance of grain boundaries is much higher than that of grains. The spreading resistance of the implanted samples is lower by factor of 2 than that of the unimplanted ones. The ratio of the real part Rs (grain effect) to imaginary part Xs (grain boundary effect) decreases with ion beam implantation. From these results, we came to the conclusion that the behavior of the grain boundaries is important to the bulk properties of polycrystalline MnNiCuFeO.

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[1] Laval, J. Y. et al., Journal de Physique, Cloolque C5, Tome 49, 1988.
[2] Al-Allak, H. M. et al., J. Appl Phys. 64 (11) 1988.
[3] Heywang, W., Solid State Electron. 3, 51 (1961).
[4] Ilingsworth, J. et al., J. Appl Phys. 67 (4) 1990.

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