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Influence of Intrinsic Defects and Strain on Electronic Reliability of Gate Oxide films

Published online by Cambridge University Press:  01 February 2011

Ken Suzuki ,
Yuta Ito  and
Hideo Miura
Ken Suzuki
Affiliation:
kn@rift.mech.tohoku.ac.jp, Tohoku University, Fracture and Reliability Research Institute, Graduate School of Engineering,, 6-6-11-716 Aoba, Aramaki, Aoba-ku,, Sendai, N/A, 980-8579, Japan
Yuta Ito
Affiliation:
jutaito@rift.mech.tohoku.ac.jp, Tohoku University, Fracture and Reliability Research Institute, Graduate School of Engineering, 6-6-11-716 Aoba, Aramaki, Aoba-ku, Sendai, N/A, 980-8579, Japan
Hideo Miura
Affiliation:
hmiura@rift.mech.tohoku.ac.jp, Tohoku University, Fracture and Reliability Research Institute, Graduate School of Engineering, 6-6-11-716 Aoba, Aramaki, Aoba-ku, Sendai, N/A, 980-8579, Japan
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Abstract

The effect of strain and intrinsic defects on both electronic and structural characteristics of HfO2-x used for sub-100-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The magnitude of the band gap of HfO2 decreases by about 10% under the applied strain. The stable crystallographic structure of the monoclinic HfO2 changes to a cubic-like structure under the strain. The magnitude of the band gap of the HfO2-x decreases drastically from 5.7 eV to about 1.0 eV due to the formation of an electronic state within the band gap when an oxygen vacancy is introduced to the perfect HfO2. In the HfO2-x film, oxygen atoms near the oxygen vacancy can move drastically at temperatures higher than 800 K. Therefore, it is very important to control the chemical composition of the hafnium oxide film and to optimize the annealing condition to maintain both the high reliability and performance of the gate oxide film.

Keywords

devicesdefectssimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E05-28
Copyright
Copyright © Materials Research Society 2006

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