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The Influence of Interfaces on the Gap State Distribution of Undoped a-Si:H
Published online by Cambridge University Press: 25 February 2011
Abstract
Modulated primary photocurrent (MPC) studies on pin structures show spatial variations of the gap state distribution across the i-layer that can be correlated with Fermi level shifts by band bending towards interfaces. These results as well as reverse bias annealing effects are explained in terms of the defect pool model. It is demonstrated that MPC measurements are basically identical to TOF measurements with clear advantages in the post-transit time regime.
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- Copyright © Materials Research Society 1990
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