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Influence of H2 on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD

  • Zhang Rong (a1), Huang Hongbin (a1), Gu Shulin (a1), Yang Kai (a1), Shi Yi (a1), Wang Ronghua (a1), Zheng Youdou (a1) and Feng Duan (a1)...


In this paper we report the influence of H2 on Ge surface segregation in Si/SiGe heterostructures. The sample were grown on Si(001) substrate tinder different gas flow of H2 by RTP/VLP-CVD. Auger electron energy spectroscopy(AES) has been used to determine the Ge distribution in Si/SiGe heterostructures. The results indicate that H2 can strongly alter the mechanism of Ge surface segregation and change the distribution of Ge atoms.



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