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The Influence of Doping on the Electronic Properties of Hydrogenated Amorphous Silicon.
Published online by Cambridge University Press: 25 February 2011
Abstract
The results of transient photoconductivity and photoinduced absorption measurements in lightly phosphorus and boron doped (0-10 ppm ) a-Si:H films at T = 300 K are presented. From the observed increase of minority carrier trapping with doping it is concluded that even light doping leads to a strong increase of the density of deep traps. Furthermore an abrupt change of the behaviour of the transient photoconductivity between 2 ppm and 3 ppm B2H6 is observed. This change may be interpreted as the transition to a p-type semiconductor.
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- Copyright © Materials Research Society 1990
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