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The Influence of Defects and Piezoelectric Fields on the Luminescence from InGaN/GaN Single Quantum Wells

Published online by Cambridge University Press:  17 March 2011

S. J. Henley  and
D. Cherns
S. J. Henley
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, U.K
D. Cherns
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, U.K
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Abstract

High spatial resolution cathodoluminescence (CL) studies have been carried out on GaN/InGaN/(0001)GaN single quantum well (SQW) structures in a field emission scanning electron microscope at 5kV and temperatures down to 8K. Direct comparison of QW CL maps with transmission electron microscope studies of plan-view samples showed that edge type threading dislocations act as non-radiative recombination centers. Spectra taken from extended areas showed a progressive blue shift in the QW emission from around 460nm at low beam intensities to about 445nm as the beam intensity was increased. This effect which correlated with a decrease in the spatial resolution is interpreted as due to an increase in the diffusion length of carriers in the SQW due to a combination of screening of the piezoelectric field and band filling effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.45
Copyright
Copyright © Materials Research Society 2001

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References

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