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Influence of Current Injection into a-Sin:H Films on Charge Trapping Defects

  • Tomoki Oku (a1), Kiyoshi Kawabata (a1), Yukio Higaki (a1), Teruhito Matsui (a1), Hirozo Takano (a1) and Mutsuyuki Otsubo (a1)...

Abstract

The degradation mechanism of a-SiN:H films under current injection is investigated. It is shown that the degradation of a-SiN:H films is closely related to the hole trapping into Si-Si, Si-H, and Si0 defects. It is presumably concluded that the hole trapping centers are the Si-Si defects in the valence band tail. We estimate that the hole trapping cross-section is nearly equal to 10−20cm2.

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Influence of Current Injection into a-Sin:H Films on Charge Trapping Defects

  • Tomoki Oku (a1), Kiyoshi Kawabata (a1), Yukio Higaki (a1), Teruhito Matsui (a1), Hirozo Takano (a1) and Mutsuyuki Otsubo (a1)...

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