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The Influence of Cerium Ion Implantation on Early-Stage Oxidation Kinetics of Nickel

Published online by Cambridge University Press:  03 September 2012

F. Czerwinski  and
J. A. Szpunar
F. Czerwinski
Affiliation:
Department of Metallurgical Engineering, McGill University, Montreal, Canada, H3A 2A7
J. A. Szpunar
Affiliation:
Department of Metallurgical Engineering, McGill University, Montreal, Canada, H3A 2A7
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Abstract

The effect of implantation with 2×1016 ions/cm2 at 150 keV Ce+on the oxidation of polycrystalline high purity Ni was examined. The radiation damage and distribution of Ce implants in Ni substrate were additionally modified by post-implantation ultra-high vacuum annealing at 1073 K. Ce implants decreased the Ni oxidation rate at 973 K by approximately one order of magnitude, and this reduction was similar to that achieved by 14 nm thick CeO2 sol-gel coatings and by 4 nm thick coatings of CeO2 deposited on the same substrate by reactive sputtering. Physical damage introduced by radiation caused a slight increase in oxidation rate during the very initial stages. However, the essential improvement in the oxidation resistance was derived entirely from the chemical role of the implants. The beneficial effect of Ce was reduced when the implanted Ni substrate was vacuum-annealed prior to the oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 677
Copyright
Copyright © Materials Research Society 1997

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