Skip to main content Accessibility help
×
Home

Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon

  • Mark E. Law (a1), Michelle D. Griglione (a1) and Misty Northridge (a1)

Abstract

Carbon is a native impurity in Si which is known to trap self-interstitials and decrease their diffusivity. Carbon has also been observed to decrease B transient enhanced diffusion (TED) in Si through these interstitial interactions. Recently it has been proposed that vacancies must also be considered when accounting for the reduction of B TED. We have incorporated both the kick-out mechanism and the Frank-Turnbull (F-T) mechanism in simulations of interstitial diffusion and carbon diffusion, as well as experiments involving B diffusion in B doped superlattices (DSLs) with varying C concentration regions. We have used the binding energy between a carbon atom and a self-interstitial as a basis for the reaction rates for both mechanisms, and have found that an single energy of 2.25 eV best reproduces the results from several experiments, assuming equilibrium initial conditions for both mechanisms and ab-initio equilibrium values for all point defects.

Copyright

References

Hide All
1. Newman, R.C. and Wakefield, J., J. Phys. Chem. Solids 19, 230 (1961).10.1016/0022-3697(61)90032-4
2. Rollert, F., Stolwijk, N.A., and Mehrer, H., Mater. Sci. Forum 38–41, 753 (1989).
3. Werner, P., Gossmann, H.-J., Jacobson, D.C., and Gösele, U., Appl. Phys. Lett. 73, 2465 (1998).10.1063/1.122483
4. Rücker, H., Heinemann, B., Röpke, W., Kurps, R., Krüger, D., Lippert, G., and Osten, H. J., Appl. Phys. Lett. 73, 1682 (1998).10.1063/1.122244
5. Scholz, R., Gosele, U., Huh, J.-Y., and Tan, T.Y., Appl. Phys. Lett. 72, 200 (1998).10.1063/1.120684
6. Fahey, P.M., Griffin, P.B., and Plummer, J.D., Rev. Mod. Phys. 61, 289 (1989).10.1103/RevModPhys.61.289
7. Scholz, R.F., Werner, P., Gösele, U., and Tan, T.Y., Appl. Phys. Lett. 74, 392 (1999).10.1063/1.123081
8. Tang, M., Colombo, L., Zhu, J., and Rubia, T. Diaz de la, Phys. Rev. B 55, (1997).
9. Tipping, A.C. and Newman, R.C., Semi. Sci. Tech. 2, 315 (1987).10.1088/0268-1242/2/5/013
10. Gossmann, H.-J., Gilmer, G.H., Rafferty, C.S., Unterwald, F.C., Boone, T., Poate, J.M., Luftman, H.S., and Frank, W., J. Appl. Phys. 77, 1948 (1995).10.1063/1.358828
11. Gossmann, H.-J., Rafferty, C.S., Unterwald, F.C., Boone, T., Mogi, T.K., Thompson, M.O., and Luftman, H.S., Appl. Phys. Lett. 67, 1558 (1995).10.1063/1.114733

Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon

  • Mark E. Law (a1), Michelle D. Griglione (a1) and Misty Northridge (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed