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The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines

Published online by Cambridge University Press:  10 February 2011

P. R. Besser ,
A. Lauwers ,
N. Roelandts ,
K. Maex ,
W. Blum ,
R. Alvis ,
M. Stucchi  and
M. De Potter
P. R. Besser
Affiliation:
Advanced Interconnect Process Development, Advanced Micro Devices, Sunnyvale, CA
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
N. Roelandts
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
W. Blum
Affiliation:
Materials Analysis Lab, Advanced Micro Devices, Dresden, Germany
R. Alvis
Affiliation:
Materials Analysis Lab, Advanced Micro Devices, Dresden, Germany Recently joined Digital Instruments, Santa Barbara, CA
M. Stucchi
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
M. De Potter
Affiliation:
IMEC, Kapeldreef 75, Leuven, Belgium
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Abstract

The effect of capping layer (Ti vs TiN) on CoSi formation and CoSi2 sheet resistance has been investigated. Resistance measurements and XTEM analysis have been used to show that the Ti cap lowers the activation energy for CoSi formation by gettering the O2 from the RTA (rapid thermal anneal) ambient and eliminating the formation of SiO2 between the growing CoSi and the Co. The sheet resistance of cobalt silicide formed from Co/Ti and Co/TiN bilayers on poly- Si lines was measured as a function of linewidth and RTA temperature. With a Ti cap, the sheet resistance is low and independent of temperature, and the RTA process window is large.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 375
Copyright
Copyright © Materials Research Society 1998

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References

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