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Indentation Load Relaxation Experiments on Al-Si Metallizations

Published online by Cambridge University Press:  16 February 2011

W. R. LaFontaine ,
B. Yost ,
R. D. Black  and
Che-Yu Li
W. R. LaFontaine
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
B. Yost
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
R. D. Black
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
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Abstract

Indentation load relaxation (ILR) experiments with indentation depths in the submicron range are described. The observed flow behavior of a 1μm thick A1-2%Si film deposited on a silicon substrate depended on the depth of penetration. For shallow penetration depths, the shape of the flow curves obtained from this sample are similar to those obtained from a conventional load relaxation test of a bulk specimen. For penetration depths close to the film/substrate interface, the influence of the substrate on the film's deformation behavior was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 165
Copyright
Copyright © Materials Research Society 1990

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References

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