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Indentation Crystallization and Phase Transformation of Amorphous Germanium

Published online by Cambridge University Press:  26 February 2011

G. Patriarche ,
E. Le Bourhis ,
M.M. Khayyat  and
M.M. Chaudhri
G. Patriarche
Affiliation:
gilles.patriarche@lpn.cnrs.fr, CNRS, LPN UPR20, France
E. Le Bourhis
Affiliation:
eric.le.bourhis@univ-poitiers.fr, U. Poitiers, LMP CNRS UMR 6630, France
M.M. Khayyat
Affiliation:
mmc11@phy.cam.ac.uk, U. Cambridge, Cavendish Laboratory, United Kingdom
M.M. Chaudhri
Affiliation:
mmc11@phy.cam.ac.uk, U. Cambridge, Cavendish Laboratory, United Kingdom
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Abstract

It has been known for about 15 years that when a Vickers indenter is loaded on to a crystalline semiconductor, such as silicon, a semiconductor to metallic phase transition occurs during indenter loading and on removal of the indenter the material within the residual indentation becomes amorphous. Here we report on a completely opposite effect: when a Berkovich or Vickers diamond indenter is loaded on to a submicrometre thick film of amorphous germanium, it densifies, crystallizes and undergoes structural phase transitions. These observations are based on transmission electron microscopy and Raman scattering investigations. It has also been shown that the indentation-induced crystallization and phase transitions occur close to the indenter tip, where the plastic strains are the highest.

Keywords

phase transformationtransmission electron microscopy (TEM)film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 904: Symposium BB – Mechanisms of Mechanical Deformation in Brittle Materials , 2005 , 0904-BB04-06
Copyright
Copyright © Materials Research Society 2006

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