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Increase of Doping Efficiency During Light Exposure in P-Type Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
Light soaking gives rise to the increase of active acceptors as well as to the creation of dangling bonds in boron doped hydrogenated amorphous silicon. The annealing out of the metastable active dopants is slow compared with that of the created dangling bonds, results in higher conductivity than annealed value during heating the sample upon light soaking. The activation energy of the relaxation time for the metastable active dopants is ˜0.1 eV higher than that for the annealing of the created dangling bonds. We ropose a new model to explain our results.
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- Copyright © Materials Research Society 1988
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