No CrossRef data available.
Article contents
Incorporation and Diffusion of P-Type Dopants for Metal Organic Vapor Phase Epitaxy
Published online by Cambridge University Press: 26 February 2011
Abstract
The control of p-type dopants is very important in producing high performance minority carrier devices such as heterojunction bipolar transistors (HBT) and lasers. In this study, an electrical characterization technique is described which is very sensitive to the p-type dopant profile in a heterojunction. Both the placement of the dopant, i.e. the as-grown profile, and thermal diffusion effects have been investigated. The factors which control the initial placement and subsequent diffusion of the dopant species have been determined and used to produce device-quality GaAs/Al0.30Ga0.70As p+/n heterojunctions.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1989