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InAs Quantum Dots for Optoelectronic Device Applications

Published online by Cambridge University Press:  26 February 2011

K. Stewart ,
S. Barik ,
M. Buda ,
H. H. Tan  and
C. Jagadish
K. Stewart
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, AUSTRALIA
S. Barik
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, AUSTRALIA
M. Buda
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, AUSTRALIA
H. H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, AUSTRALIA
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, AUSTRALIA
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Abstract

In this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B3.4
Copyright
Copyright © Materials Research Society 2005

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References

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