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Inas Nanostructures in a Silicon Matrix: Growth and Properties

Published online by Cambridge University Press:  10 February 2011

G. E. Cirlin ,
V. A. Egorov ,
V. N. Petrov ,
A. O. Golubok ,
N. I. Komyak ,
N. K. Polyakov ,
Yu. B. Samsonenko ,
D. V. Denisov ,
B. V. Volovik  and
V. M. Ustinov
...Show all authors
G. E. Cirlin
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
V. A. Egorov
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
V. N. Petrov
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
A. O. Golubok
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
N. I. Komyak
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia
N. K. Polyakov
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
Yu. B. Samsonenko
Affiliation:
Institute for Analytical Instrumentation RAS, St.Petersburg, Russia A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
D. V. Denisov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
B. V. Volovik
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
V. M. Ustinov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
Zh. I. Alferov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia
N. N. Ledentsov
Affiliation:
A.F.Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia Technical University, Berlin, Germany
R. Heitz
Affiliation:
Technical University, Berlin, Germany
D. Bimberg
Affiliation:
Technical University, Berlin, Germany
N. D. Zakharov
Affiliation:
Max-Plank-Institute for Microstructure Physics, Halle/Saale, Germany, 007-812-2479350, 007-812-2517038, cirlin@beam.ioffe.rssi.ru
P. Werner
Affiliation:
Max-Plank-Institute for Microstructure Physics, Halle/Saale, Germany, 007-812-2479350, 007-812-2517038, cirlin@beam.ioffe.rssi.ru
U. Gösele
Affiliation:
Max-Plank-Institute for Microstructure Physics, Halle/Saale, Germany, 007-812-2479350, 007-812-2517038, cirlin@beam.ioffe.rssi.ru
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Abstract

Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. Critical thickness at which three dimensional InAs islands start to appear at the Si(100) surface is within the range of 0.7 - 4.0 monolayers (substrate temperature range is 350°C - 430 °C). Their size depends critically on the growth conditions and is between 5 nm and 80 nm (uncapped islands). Critical lateral size of the coherent (Si capped) dislocation-free island is equal to 2 - 5 nm depending on the island height. Islands having larger size are dislocated. Optical properties of InAs nanoscale islands capped with Si reveal a luminescence band in the 1.3 μm region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 51
Copyright
Copyright © Materials Research Society 2000

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References

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