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Inas Nanostructures in a Silicon Matrix: Growth and Properties

  • G. E. Cirlin (a1) (a2), V. A. Egorov (a1), V. N. Petrov (a1), A. O. Golubok (a1), N. I. Komyak (a1), N. K. Polyakov (a1) (a2), Yu. B. Samsonenko (a1) (a2), D. V. Denisov (a2), B. V. Volovik (a2), V. M. Ustinov (a2), Zh. I. Alferov (a2), N. N. Ledentsov (a2) (a3), R. Heitz (a3), D. Bimberg (a3), N. D. Zakharov (a4), P. Werner (a4) and U. Gösele (a4)...

Abstract

Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. Critical thickness at which three dimensional InAs islands start to appear at the Si(100) surface is within the range of 0.7 - 4.0 monolayers (substrate temperature range is 350°C - 430 °C). Their size depends critically on the growth conditions and is between 5 nm and 80 nm (uncapped islands). Critical lateral size of the coherent (Si capped) dislocation-free island is equal to 2 - 5 nm depending on the island height. Islands having larger size are dislocated. Optical properties of InAs nanoscale islands capped with Si reveal a luminescence band in the 1.3 μm region.

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1. Goldstein, L., Glas, F., Marzin, J.Y., Charasse, M.N., and Roux, G. Le, Appl.Phys.Lett. 47, p.1099 (1985).
2. Leonard, D., Krishnamurthy, M., Reaves, C.M., Denbaars, S.P., and Petroff, P.M., Appl.Phys.Lett. 63, p.3203 (1993).
3. Strassburg, M., Kutzer, V., U Pohl, W., Hoffmann, A., Broser, I., Ledentsov, N.N., Bimberg, D., Rosenauer, A., Fischer, U., Gerthsen, D., Krestnikov, I.L., Maximov, M.V., P.S. Kop'ev, and Zh.I. Alferov. Appl. Phys. Lett. 72, p. 942 (1998).
4. Feng Liu and Lagally, M.G., Surf Sci. 386, p. 169 (1997).
5. Ledentsov, N.N. in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, July 21–26, 1996, edited by Scheffler, M. and R., Zimmermann, World Scientific, Singapoure, 1996, 1, p. 1924.
6. Gerard, J.M., Cabrol, O., and Sermage, B., Appl.Phys.Lett. 68, p.3123 (1996).
7. Ishisaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, p. 6 66 (1986).
8. Cirlin, G.E., Guryanov, G.M., Golubok, A.O., Tipissev, S. Ya., Ledentsov, N.N., Kop'ev, P.S., Grundmann, M. and Bimberg, D., Appl. Phys. Lett. 67, p.97 (1995).
9. G.M. Gur'yanov, Demidov, V.N., Korneeva, N.P., Petrov, V.N., Yu. Samsonenko, B., and Tsyrlin, G.E.. Tech.Phys. 42, p.956 (1997).
10. Cirlin, G.E., Petrov, V.N., Dubrovskii, V.G., Masalov, S.A., Golubok, A.O., Komyak, N.I., Ledentsov, N.N., Alferov, Zh. I., and Bimberg, D., Tech.Phys.Lett. 24, p.290 (1998).
11. Mano, T., Fujioka, H., Ono, K., Watanabe, Y., and Oshima, M.. Appl.Surf.Sci. 130–132, p. 760 (1998).
12. Sharma, P.C., Alt, K.W., Yeh, D.Y., and Wang, K.L., Appl. Phys. Lett. 75, p. 1273 (1999).
13. Cirlin, G.E., Dubrovskii, V.G., Petrov, V.N., Polyakov, N.K., Korneeva, N.P., Demidov, V.N., Golubok, A.O., Masalov, S.A., Kurochkin, D.V., Gorbenko, O.M., Komyak, N.I., Ustinov, V.M., Egorov, A. Yu., Kovsh, A.R., Maximov, M.V., Tsatsul'nikov, A.F., Volovik, B.V., Zhukov, A.E., Kop'ev, P.S., Alferov, Zh. I., Ledentsov, N.N., Grundmann, M., and Bimberg, D.. Semicond.Sci.Technol. 13, p. 1262 (1998).
14. Cyrlin, G.E., Petrov, V.N., Dubrovskii, V.G., Samsonenko, Yu. B., Polyakov, N.K., Golubok, A.O., Masalov, S.A., Komyak, N.I., Ustinov, V.M., Yu, A.. Egorov, Kovsh, A.R., Maximov, M.V., Tsatsul'nikov, A.F., Volovik, B.V., Zhukov, A.E., Kop'ev, P.S., Ledentsov, N.N., Alferov, Zh. I., and Bimberg, D., Semiconductors 33, p. 972 (1999).
15. Cirlin, G.E., Polyakov, N.K., Petrov, V.N., Egorov, V.A., Yu. Samsonenko, B., Denisov, B.V., Busov, V.M., Volovik, B.V., Ustinov, V.M., Alferov, Zh. I., Ledentsov, N.N., Bimberg, D., Zakharov, N.D., and Werner, P., Czeck.J. Phys. 49, p. 15 47 (1999).
16. Heitz, R., Ledensov, N. N., Bimberg, D., Yu, A.. Egorov, Maximov, M.V., Ustinov, V.M., Zhukov, A.E., Alferov, Zh. I., Cirlin, G.E., Soshnikov, I.P., Zakharov, N.D., Werner, P., and Gosele, U., Appl. Phys. Lett. 74, p. 1701 (1999).
17. InAs critical thickness for both samples was exceeded by the value of 0.8 ML.
18. Zakharov, N.D., Werner, P., Heitz, R., Ledensov, N. N., Bimberg, D., Ustinov, V.M., Volovik, B.V., Alferov, Zh. I., Polyakov, N.K., Petrov, V.N., Egorov, V.A., and Cirlin, G.E., to be published 0583–0057

Inas Nanostructures in a Silicon Matrix: Growth and Properties

  • G. E. Cirlin (a1) (a2), V. A. Egorov (a1), V. N. Petrov (a1), A. O. Golubok (a1), N. I. Komyak (a1), N. K. Polyakov (a1) (a2), Yu. B. Samsonenko (a1) (a2), D. V. Denisov (a2), B. V. Volovik (a2), V. M. Ustinov (a2), Zh. I. Alferov (a2), N. N. Ledentsov (a2) (a3), R. Heitz (a3), D. Bimberg (a3), N. D. Zakharov (a4), P. Werner (a4) and U. Gösele (a4)...

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