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In Situ Study of the Temperature Dependence of Irradiation-Induced Amorphization in A-Sic

Published online by Cambridge University Press:  21 February 2011

W. J. Weber
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352
L. M. Wang
Affiliation:
Dept. of Earth and Planetary Sciences, Univ. of New Mexico, Albuquerque, NM 87131
N. Yu
Affiliation:
Material Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545
N. J. Hess
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352
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Abstract

Ion-beam-induced amorphization in single crystal α-SiC has been studied as a function of temperature. Specimens have been irradiated with 1.5 MeV Xe+ ions over the temperature range from 20 to 475 K using the HVEM-Tandem Facility (ANL), and the evolution of the amorphous state has been followed in situ in the HVEM. Specimens also have been irradiated at 170, 300, and 370 K with 360 keV Ar+ ions, and the damage accumulation process followed in situ by Rutherford backscattering spectroscopy/channeling using the dual beam facilities at the Ion Beam Materials Laboratory (LANL). At 20 K, the displacement dose for complete amorphization is 0.25 dpa and increases with temperature in two stages. The activation energy associated with the simultaneous recovery processes above 100 K is 0.12 ± 0.02 eV. The critical temperature above which amorphization does not occur is 485 K under the 1.5 MeV Xe+ irradiation conditions. Ion channeling results suggest that the rate of simultaneous recovery increases with temperature only above a critical damage level. Raman spectroscopy indicates that rapid chemical disordering occurs during irradiation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 McHargue, C.J. and Williams, J.M., Nucl. Instr. and Meth. B 80/81, 889 (1993).Google Scholar
2 Inui, H., Mori, H., and Fujita, H., Phil. Mag. B 61, 107 (1990).Google Scholar
3 Matsunaga, A., Kinoshita, C., Nakai, K., and Tomokiyo, Y., J. Nucl. Mater. 179181, 457 (1991).Google Scholar
4 Inui, H., Mori, H., and Sakata, T., Phil. Mag. B 66, 737 (1992).Google Scholar
5 Inui, H., Mori, H., Suzuki, A., and Fujita, H., Phil. Mag. B 65, 1 (1992).Google Scholar
6 Weber, W.J. and Wang, L.M., Nucl. Instr. and Meth. (in press).Google Scholar
7 Allen, C.W., Funk, L.L., Ryan, E.A., and Taylor, A., Nucl. Instr. and Meth. B 40/41, 553 (1989).Google Scholar
8 Yu, N., Nastasi, M., Levine, T.E., Tesmer, J.R., Hollander, M.G., Evans, C.R., and Maggiore, C.J., Nucl. Instr. and Meth. B 99, 566 (1995).Google Scholar
9 Ziegler, J.F., Biersack, J.P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).Google Scholar
10 Barry, A.L., Lehmann, B., Fritsch, D., and Bräunig, D., IEEE Transactions on Nuclear Science 38, 1111 (1991).Google Scholar
11 Weber, W.J., Ewing, R.C., and Wang, L.M., J. Mater. Res. 9, 688 (1994).Google Scholar
12 Weber, W.J. and Wang, L.M., Nucl. Instr. and Meth. B 91, 63 (1994).Google Scholar
13 Morehead, F.F. and Crowder, B.L., Radiât. Eff. 6, 27 (1970).Google Scholar
14 Delage, J., Popoola, O., Villain, J.P., and Moine, P., Mater. Sci. and Engr. A115, 133 (1989).Google Scholar
15 Koike, J., Okamoto, P. R., and Rehn, L. E., J. Mater. Res. 4, (5) 1143 (1989).Google Scholar
16 Goldberg, R.D., Elliman, R.G., and Williams, J.S., Nucl. Instr. and Meth. B 80/81, 596 (1993).Google Scholar