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In Situ Spectroscopic Ellipsometry Studies of The Interaction Process of Ethene With Si Surfaces During Sic Formation

Published online by Cambridge University Press:  10 February 2011

T. Wöhner ,
Th. Stauden ,
V. Cimalla ,
G. Eichhorn ,
J.A. Schaefer  and
J. Pezoldt
T. Wöhner
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PF 100565, D-98684 Ilmenau, Germany TU Ilmenau, Institut für Physik, PF 100565, D-98684 Ilmenau, Germanythomas.woehner@e-technik.tu-ilmenau.de
Th. Stauden
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PF 100565, D-98684 Ilmenau, Germany
V. Cimalla
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PF 100565, D-98684 Ilmenau, Germany
G. Eichhorn
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PF 100565, D-98684 Ilmenau, Germany
J.A. Schaefer
Affiliation:
TU Ilmenau, Institut für Physik, PF 100565, D-98684 Ilmenau, Germany
J. Pezoldt
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PF 100565, D-98684 Ilmenau, Germany
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Abstract

The interaction of ethene with silicon (111) surfaces at different process temperatures (580°C, 680°C, 780°C) was monitored in situ by spectroscopic ellipsometry. It is shown that spectroscopic ellipsometry is a reliable method to monitor the carbonization process of silicon surfaces. Different SiC formation stages (incubation time, (√3×√3)R30° reconstruction, 2D growth and 3D growth) were observed using complimentary analyzing techniques. The change of the ellipsometric signal as a function of process time is related to these stages and was interpreted using an optical model which consists of four layers (surface roughness, SiC layer, interface layer, Si substrate).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 95
Copyright
Copyright © Materials Research Society 1999

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References

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