Skip to main content Accessibility help
×
Home

In Situ Probing and Atomistic Simulation of a-Si:H Plasma Deposition

  • Eray S. Aydil (a1), Dimitrios Maroudas (a1), Denise C. Marra (a1), W. M. M. Kessels (a2), Sumit Agarwal (a1), Shyam Ramalingam (a1), Saravanapriyan Sriraman (a1), M. C. M. Van de Sanden (a2) and Akihiro Takano (a1) (a3)...

Abstract

Hydrogenated amorphous silicon thin films deposited from SiH4 containing plasmas are used in solar cells and thin film transistors for flat panel displays. Understanding the fundamental microscopic surface processes that lead to Si deposition and H incorporation is important for controlling the film properties. An in situ method based on attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy was developed and used to determine the surface coverage of silicon mono-, di-, and tri-hydrides as a function of deposition temperature and ion bombardment flux. Key reactions that take place on the surface during deposition are hypothesized based on the evolution of the surface hydride composition as a function of temperature and ion flux. In conjunction with the experiments, the growth of a-Si:H on H-terminated Si(001)-(2×1) surfaces was simulated through molecular dynamics. The simulation results were compared with experimental measurements to validate the simulations and to provide supporting evidence for radical-surface interaction mechanisms hypothesized based on the infrared spectroscopy data. Experimental measurements of the surface silicon hydride coverage and atomistic simulations are used synergistically to elucidate elementary processes occurring on the surface during a-Si:H deposition.

Copyright

References

Hide All
1. Biswas, R., Kwon, I., and Soukoulis, C. M., Phys. Rev. B 44, 3403 (1991).
2. Li, Q., and Biswas, R., Appl. Phys. Lett. 68, 2261 (1996).
3. Biswas, R., and Pan, B. C., Appl. Phys. Lett. 72, 371 (1998).
4. Fujiwara, H., Koh, J., Wronski, C. R., and Collins, R. W., Appl. Phys. Lett. 74, 3687 (1999).
5. Lubianiker, Y., Cohen, J. D., Jin, H.-C., and Abelson, J. R., Phys. Rev. B 60, 4434 (1999).
6. Marra, D. C., Edelberg, E. A., Naone, R. L., and Aydil, E. S., J. Vac. Sci. Technol. A 16, 3199 (1998).
7. Chabal, Y. J., Surf. Sci. Rept. 8, 211 (1988).
8. Edelberg, E. A., Perry, A., Benjamin, N., and Aydil, E. S., Rev. Sci. Instrum. 70, 2689 (1999).
9. Edelberg, E. A., Perry, A., Benjamin, N., and Aydil, E. S., J. Vac. Sci. Technol. A 17, 506 (1999).10.1116/1.581612
10. Marra, D. C., Edelberg, E. A., Naone, R. L., and Aydil, E. S., Appl. Surf. Sci. 133, 148 (1998).
11. Kessels, W. M. M., Marra, D. C., Sanden, M. C. M. Van de, and Aydil, E. S., J. Vac. Sci. Technol. A, in press (2001).
12. Jansson, U. and Uram, K. J., J. Chem. Phys. 91, 7978 (1989).10.1063/1.457216
13. Uram, K. J. and Jansson, U., J. Vac. Sci. Technol. B 7, 1176 (1989).
14. Uram, K. J. and Jansson, U., Surf. Sci. 249, 105 (1991).
15. Burrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., and Christman, S. B., Appl. Phys. Lett. 53, 998 (1988).
16. Chabal, Y. J. and Raghavachari, K., Phys. Rev. 53, 282 (1984).
17. Chabal, Y. J., in Internal Reflection Spectroscopy: Theory and Applications, edited by Mirabella, J. Francis M. (Marcel Dekker, Inc., New York, 1993), p. 191.
18. Crowell, J. E. and Lu, G. J., J. Electron Spectrosc. Relat. Phenom. 54–55, 1045 (1990).
19. Marra, D. C., Ph.D. Thesis, University of California Santa Barbara, (2000).
20 Toyoshima, Y., Arai, K., Matsuda, A., and Tanaka, K., J. Non-Cryst. Solids 137–138, 765 (1991).
21. Olander, D. R., Balooch, M., Abrefah, J., and Siekhaus, W. J., J. Vac. Sci. Technol. B 5, 1404 (1987).10.1116/1.583625
22. Gates, S. M., Kunz, R. R., and Greenlief, C. M., Surf. Sci. 207, 364 (1989).
23. Gates, S. M., Greenlief, C. M., and Beach, D. B., J. Chem. Phys. 93, 7493 (1990).
24. Cheng, C. C., and Yates, J. J. T., Phys. Rev. B 43, 4041 (1991).
25. Wang, Y., Bronikowski, M. J., and Hamers, R. J., Surf. Sci. 311, 64 (1994).
26. Chiang, C.-M., Gates, S. M., Lee, S. S., Kong, M., and Bent, S. F., J. Phys. Chem. B 101, 9357 (1997).
27. Ramalingam, S., Maroudas, D., and Aydil, E. S., J. Appl. Phys. 84, 3895 (1998).
28. Ramalingam, S., Maroudas, D., Aydil, E. S., and Walch, S. P., Surf. Sci. 418, L8 (1998).10.1016/S0039-6028(98)00703-1
29. Ramalingam, S., Mahalingam, P., Aydil, E. S., and Maroudas, D., J. Appl. Phys. 86, 5497 (1999).
30. Walch, S.P, Ramalingam, S., Eray Aydil, S., and Maroudas, D., Chem. Phys. Lett. 329, 304 (2000).
31. Ramalingam, S., Maroudas, D., and Aydil, E. S., J. Appl. Phys. 86, 2872 (1999).10.1063/1.371136
32. Ramalingam, S., Ph.D. Thesis, University of California, Santa Barbara (2000).
33. Tersoff, J., Phys.Rev. Lett. 56, 632 (1986)10.1103/PhysRevLett.56.632
34. Tersoff, J., Phys. Rev. B 37, 6991 (1988).
35. Tersoff, J., Phys. Rev. B 38, 9902 (1988).10.1103/PhysRevB.38.9902
36. Ohira, O. Ukai, Adachi, T., Takeuchi, Y., and Murata, M., Phys. Rev. B 52, 8283 (1995)
37. Ohira, T., Ukai, O., Noda, M., Takeuchi, Y., Murata, M., and Yoshida, H., Mater. Res. Soc. Symp. Proc. 408, 445 (1996).
38. Doughty, D. A., Doyle, J. R., Lin, G. H., Gallagher, A., J. Appl. Phys. 67, 6220 (1990).
39. Ramalingam, S., Sriraman, S., Aydil, E. S., and Maroudas, D., Appl. Phys. Lett. 78, 2685 (2001).
40. Keudell, A. von and Abelson, J. R., Phys. Rev. B 59 5791 (1999).

In Situ Probing and Atomistic Simulation of a-Si:H Plasma Deposition

  • Eray S. Aydil (a1), Dimitrios Maroudas (a1), Denise C. Marra (a1), W. M. M. Kessels (a2), Sumit Agarwal (a1), Shyam Ramalingam (a1), Saravanapriyan Sriraman (a1), M. C. M. Van de Sanden (a2) and Akihiro Takano (a1) (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed