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In Situ Measurements of Hydrogen Flux, Surface Coverage, Incorporation and Desorption During Magnetron Sputter-Deposition of A-SI:H.

Published online by Cambridge University Press:  21 February 2011

J. R. Abelson ,
N. Maley ,
J. R. Doyle ,
G. F. Feng ,
M. Fitzner ,
M. Katiyar ,
L. Mandrell ,
A. M. Myers ,
A. Nuruddin  and
D. N. Ruzic
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J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
N. Maley
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
J. R. Doyle
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
G. F. Feng
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
M. Fitzner
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
M. Katiyar
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
L. Mandrell
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
A. M. Myers
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
A. Nuruddin
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
D. N. Ruzic
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
S. Yang
Affiliation:
Coordinated Science Laboratory and the Materials Science Department, University of Illinois, Urbana IL 61801
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Abstract

High quality a-Si:H films are deposited by d.c. magnetron reactive sputtering of a Si target in an (Ar + H2) plasma. This paper reports the first comprehensive understanding of the growth process. The incident flux, surface H coverage, H2 release, and bulk H incorporation are determined using four in situ, real time techniques: double modulation mass spectroscopy, isotope replacement experiments, reflection absorption infra-red spectroscopy, and spectroscopic ellipsometry. In addition, the sputtered particle transport is simulated using Monte-Carlo techniques. For conditions which produce electronic quality a-Si:H, the total H flux arriving at the surface varies between 0.5 – 2 times the depositing Si flux; approximately half of this flux appears to reflect from the surface without interaction. The growth surface has excess H varying between 0.5 – 2 × 1015/cm2, and this surface H coverage is uniquely related to the bulk H incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 619
Copyright
Copyright © Materials Research Society 1991

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References

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