Skip to main content Accessibility help
×
Home

In Situ Investigation of the a-Si:H/C-Si Interface

  • H. Feist (a1), C. Swiatkowski (a1), J. R. Elmiger (a1), M. Zipfel (a1) and M. Kunst (a1)...

Abstract

The deposition of a-Si:H films on crystalline silicon substrates was monitored in situ by transient photoconductivity measurements in the microwave frequency range. At the start of the deposition a drastic increase of the interface recombination velocity was observed, followed by a rapid decrease. The implications of these results for the structure of the interface are discussed. Changes of the interface after deposition were detected without a change of the temperature, even at 250'C: The long relaxation time of the structure of the interface will be discussed. Ex situ results on the samples produced will be compared to the in situ results in view of the passivation properties of a-Si:H films on c-Si substrates.

Copyright

References

Hide All
[1] Sawada, T. et al., Proc. 1st WCPEC Hawai, 1 (1994) 1219.
[2] Neitzert, H.C., Hirsch, W. and Kunst, M., Phys. Rev. B, 47 (1993) 4080.
[3] Neitzert, H.C. and Kunst, M., Appl. Phys. A, 55 (1992) 378.
[4] Kramer, M., Schieck, R. and Kunst, M., Proc. 13th Europ. Photov. Sol. Energy Conf. and Exhib. Nice, (1995) 451.

In Situ Investigation of the a-Si:H/C-Si Interface

  • H. Feist (a1), C. Swiatkowski (a1), J. R. Elmiger (a1), M. Zipfel (a1) and M. Kunst (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed