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In Situ Design of Experiments for A Reactive Ion Etching Process
Published online by Cambridge University Press: 10 February 2011
Abstract
We introduce a new procedure to perform a design of experiments (DOE) for plasma etching processes. In particular, we use in situ etch rate estimations to maximize the number of observable setpoints during a single run of the etching process. This procedure is applied to characterize the spatial uniformity of a plasma chamber used in the manufacturing of flat panel displays.
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- Copyright © Materials Research Society 1999