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In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors

Published online by Cambridge University Press:  25 February 2011

Mansour Moinpour ,
K. Bohannan ,
M. Shenasa ,
A. Sharif ,
G. Guzzo ,
D.F. Brestovansky ,
R.J. Markle  and
R. Wilkes
Mansour Moinpour
Affiliation:
National Semiconductor Co., Fairchild Research Ctr., Santa Clara, CA 95052
K. Bohannan
Affiliation:
National Semiconductor Co., Fairchild Research Ctr., Santa Clara, CA 95052
M. Shenasa
Affiliation:
National Semiconductor Co., Fairchild Research Ctr., Santa Clara, CA 95052
A. Sharif
Affiliation:
Union Carbide Industrial Gases, Linde Division, Tarrytown, N.Y., 10591
G. Guzzo
Affiliation:
Union Carbide Industrial Gases, Linde Division, Tarrytown, N.Y., 10591
D.F. Brestovansky
Affiliation:
Union Carbide Industrial Gases, Linde Division, Tarrytown, N.Y., 10591
R.J. Markle
Affiliation:
SEMATECH, Austin, TX 78741
R. Wilkes
Affiliation:
SEMATECH, Austin, TX 78741
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Abstract

A contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 179
Copyright
Copyright © Materials Research Society 1992

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References

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