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Impurity State-Dangling Bond Pairs in Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
We use the self-consistent pseudopotential method with a supercell model of a-Si:H to study the electronic structures of substitutional fourfold- coordinated P and fourfold-coordinated B at the second neighbor of a dangling bond. Partial transfer of charge from the impurity state to the dangling bond state is examined. The influence of passivating the dangling bond by a single H atom on the impurity state is also discussed.
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- Copyright © Materials Research Society 1988
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