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Impurity Conduction in n-Type 4H-SIC

Published online by Cambridge University Press:  15 February 2011

A. O. Evwaraye ,
S. R. Smith ,
W. C. Mitchel  and
M. D. Roth
A. O. Evwaraye
Affiliation:
Department of Physics, University of Dayton, 300 College Park, Dayton, Ohio 45469–2314
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, Ohio 45469–0178
W. C. Mitchel
Affiliation:
Wright Laboratory, Materials Directorate, MLPO
M. D. Roth
Affiliation:
Wright-Patterson Air Force Base, Ohio 45433–7707
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Abstract

Impurity conduction (or hopping conduction) has been observed in the more heavily n-type 4H-SiC samples by both temperature dependent resistivity measurements and thermal admittance spectroscopy. The measured activation energies ɛ 3 for hopping were 4–5 meV and 2.3–3.0 meV respectively. No evidence of hopping conduction was seen by either method in the sample where ND-NA < 1018 cm-3. The thermal admittance spectrum of the lightly n-type sample showed the two nitrogen levels at 53 and 100 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 637
Copyright
Copyright © Materials Research Society 1996

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