Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-23T14:15:50.369Z Has data issue: false hasContentIssue false
  • English
  • Français

Impurities and Metastable Centers in Amorphous Silicon Solar Cells

Published online by Cambridge University Press:  28 February 2011

D. E. Carlson
D. E. Carlson*
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
Get access

Abstract

Amorphous silicon solar cells are adversely affected by impurities through the creation of traps, recombination centers and metastable centers. The microstructure of discharged-produced, hydrogenated amorphous silicon (a-Si:H) appears to be strongly affected by the presence of impurities in the discharge atmosphere. A model is developed in which impurities create microvoids in a-Si:H, and traps, recombination centers and metastable centers are associated with the internal surfaces of the microvoids. In this model, hydrogen plays an important role in determining the electronic activity and diffusivity of impurities, and metastable centers are created by the trapping of holes near microvoids and the induced motion of hydrogen on the internal surfaces of the microvoids.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 467
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Carlson, D.E., “Tetrahedrally-Bonded Amorphous Semiconductors”, Eds., Adler, D. and Fritzsche, H., Plenum Press, NY, 1985, p. 165.Google Scholar
2. Carlson, D.E., Moore, A.R., Szostak, D.J., Goldstein, B., Smith, R.W., Zanzucchi, P.J. and Frenchu, W.R., Solar Cells 9, 19 (1983).CrossRefGoogle Scholar
3. Delahoy, A.E. and Griffith, R.W., Conf. Record of 15th IEEE Photovoltaic Spec. Conf. (IEEE, NY), 1981, p. 704.Google Scholar
4. Crandall, R.S., Phys. Rev. B, 24, 7457 (1981).Google Scholar
5. Carlson, D.E., J. Vac. Sci. Technol., 20, 290 (1982).Google Scholar
6. Carlson, D.E., “Hydrogenated Amorphous Silicon, Part D”, Eds., Pankove, J., Academic Press, Orlando, Florida, 1984, p. 7.CrossRefGoogle Scholar
7. Nakamura, N., Tsuda, S., Takahama, T., Nishikuni, N., Watanabe, K., Ohnishi, M. and Kuwano, Y., AIP Conf. Proc. No. 120 (AIP, NY, 1984) p. 303.Google Scholar
8. Tsai, C.C., Stutzmann, M. and Jackson, W.B., AIP Conf. Proc. No. 120 (AIP, NY, 1984), p. 242.Google Scholar
9. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).CrossRefGoogle Scholar
10. Mahan, A.H., Raboisson, P. and Williamson, D.L., Bull. Am. Phys. Soc., 31, 545 (1986).Google Scholar
11. Sakurai, T. and Hagstrum, H.D., Phys. Rev. B 14 [4] 1593 (1976).Google Scholar
12. Pankove, J.I. and Carlson, D.E., Ann. Rev. Mater. Sci. 10, 43 (1980).Google Scholar
13. Matsumura, H., Sakai, K., Maeda, M., Furukawa, S. and Horiuchi, K., J. Appl. Phys. 54, 3106 (1983).Google Scholar
14. Carlson, D.E., Smith, R.W., Magee, C.W. and Zanzucchi, P.J., Philos. Mag. B45, 51 (1982).Google Scholar
15. Carlson, D.E., Smith, R.W., Zanzucchi, P.J. and Frenchu, W.R., Conf. Record of 16th IEEE Photovoltaic Spc. Conf., (IEEE, NY, 1982), p. 1372.Google Scholar
16. Leroueille, J., Phys. Stat. Sol. (a) 67, 177 (1981).Google Scholar
17. Caldas, M.J., Leite, J.R. and Fazzio, A., Physica 116B, 106 (1983).Google Scholar
18. Lucovsky, G. and Lin, S.Y., AIP Conf. Proc. No. 120 (AIP, NY, 1984) p. 55.Google Scholar
19. Yamazaki, S., Shiraishi, T. and Adler, D., J. Non-Crys. Sol. 68, 167 (1984).Google Scholar
20. Pontuschka, W.M., Carlos, W.E., Taylor, P.C. and Griffith, R.W., Phys. Rev. B25, 4362 (1982).Google Scholar
21. Zygmunt, S.A., Eberhart, M.E., Johnson, K.H. and Adler, D., J. Non-Crys. Sol. 75, 297 (1985).Google Scholar
22. Carlson, D.E., to be published.Google Scholar
23. Graebner, J.E., Allen, K.C. and Golding, B., Phys. Rev. B31, 904 (1985).Google Scholar
24. Gleason, K.K., Baum, J., Garroway, A.N., Pinea, A. and Reimer, J.A., Bull. Am. Phys. Soc. 31, 236 (1986).Google Scholar
25. Hirabayashi, I., Morigaki, K. and Nitta, S., Jap. J. Appl. Phys. 19, L357 (1980).Google Scholar
26. Dersch, H., Stuke, J. and Beichler, J., Appl. Phys. Lett. 38, 456 (1981).CrossRefGoogle Scholar
27. Adler, D., Eberhart, M.E., Johnson, K.H. and Zygmunt, S.A., J. Non-Crys. Sol. 66, 273 (1984).Google Scholar
28. Zhang, P., Tan, C., Zhu, Q. and Peng, S., 10th International Conf. on Amorphous & Liquid Semicond. (Japan) 1983.Google Scholar
29. Hong, C.S., Teng, K.S., Hsu, K.C., Jou, W.J., Ueng, J.Y., Lee, S.C. and Hwang, H.L., 18th IEEE Photovoltaic Spec. Conf., Las Vegas, Oct. 1985.Google Scholar
30. Chenevas-Paule, A., Bellissent, R., Roth, M. and Pankove, J., 11th International Conf. of Amorphous & Liquid Semicond., Rome, Sept. 1985.Google Scholar
31. Tavendale, A.J., Williams, A.A. and Pearton, S.J., Appl. Phys. Lett. 48, 590 (1986).Google Scholar
32. DeLeo, G.G. and Fowler, W.B., Phys. Rev. B31 [10] 6861 (1985).Google Scholar
33. Brodsky, M., Frisch, M.A., Ziegler, J.F. and Lanford, W.A., Appl. Phys. Lett. 30, 561 (1977).Google Scholar
34. Ozawa, K., Takagi, N. and Asama, K., Jap. J. Appl. Phys. 22, 767 (1983).Google Scholar
35. D'Antonio, P. and Konnert, J.H., “Tetrahedrally Bonded Amorphous Semiconductors”, (Eds., Street, R.A., Biegelsen, D.K. and Knights, J.C., AIP, NY 1981) p. 117.Google Scholar
36. Minamino, Y., Nitta, Y., Fujisawa, K., Kubo, H., Iwasaki, C., Minato, T., Tomita, K. and Ishibitsu, K., Conf. Record of 17th IEEE Photovoltaic Spec. Conf. (IEEE, NY 1984) p. 229.Google Scholar
37. Irsigler, P., Wagner, D. and Dunstan, D.J., J. Non-Cryst. Sol. 69 [2,3] 207 (1985).Google Scholar
38. Jang, J. and Lee, C., AIP Conf. Proc. No. 120 (AIP, NY, 1984) p. 280.Google Scholar
39. Hirabayashi, I., Morigaki, K. and Yoshida, M., Solar Energy Mat. 8, 123 (1982).Google Scholar
40. Carlson, D.E., unpublished results.Google Scholar
41. Chronar Corp. Annual Progress Report, 1 Oct. 1984-30 Sept. 1985, SERI Subcontract No. ZB-3-03056-1.Google Scholar
42. Reimer, J.A., Vaughnan, R.W. and Knights, J.C., Phys. Rev. B24, 3360 (1981).Google Scholar
43. Shimizu, T., Kumeda, M., Morimoto, A., Yokomichi, H. and Ishii, N., 11th International Conf. on Amorphous and Liquid Semicond., Rome (Sept. 1985).Google Scholar
44. Matsumura, H., Uesugi, T. and Ihara, H., 16th International Conf. on Solid State Devices and Mat., Kobe, Japan (1984).Google Scholar
45. Morimoto, A., Yokomichi, H., Atoji, T., Kumeda, M., Watanabe, I. and Shimizu, T., AIP Conf. Proc. No. 120 (AIP, NY, 1984).Google Scholar
46. Ohsawa, M., Hama, T., Akasaka, T., Ichimura, T., Sakai, H., Ishida, S. and Uchida, Y., Jap. J. Appl. Phys. 25 [10] L838 (1985).Google Scholar