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Improving Performance of Amorphous Silicon Solar Cells Using Tungsten Oxide as a Novel Buffer Layer between the SnO2/p-a-SiC Interface

Published online by Cambridge University Press:  01 February 2011

Liang Fang ,
Seung Jae Baik ,
Koseng Su Lim ,
Seung Hyup Yoo ,
Myung Soo Seo  and
Sang Jung Kang
Liang Fang
Affiliation:
fang@kaist.ac.kr, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Semiconductor Building 2302, School of Electrical Engineering and Computer Science, Daejeon, 305-7-1, Korea, Republic of, 82-042-350-8027, 82-042-350-
Seung Jae Baik
Affiliation:
solar100@kaist.ac.kr, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
Koseng Su Lim
Affiliation:
kslim@ee.kaist.ac.kr, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
Seung Hyup Yoo
Affiliation:
syoo@ee.kaist.ac.kr, KAIST, Electrical Engineering, 373-1 Guseong-dong, Daejeon, 305-701, Korea, Republic of
Myung Soo Seo
Affiliation:
audience1123@paran.com, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
Sang Jung Kang
Affiliation:
goska777@kaist.ac.kr, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
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Abstract

A thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a novel buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon (a-Si) based solar cells. By using this film, a-Si solar cells with a p-a-WO3/p-a-SiC double p-layer structure were fabricated and the cell photovoltaic characteristics were investigated as a function of p-a-WO3 layer thickness. By inserting a 2 nm-thick p-a-WO3 layer between SnO2 and a 6 nm-thick p-a-SiC layer, the short circuit current density increased from 9.73 to 10.57 mA/cm2, and the conversion efficiency was enhanced from 5.17 % to 5.98 %.

Keywords

amorphousthin filmdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A07-05
Copyright
Copyright © Materials Research Society 2010

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References

1 Lim, K. S., Konagai, M. and Takahashi, K., J. Appl. Phys. 56, 538 (1984).Google Scholar
2 Lee, C. H., Jeon, J. W. and Lim, K. S., J. Appl. Phys. 87, 8778 (2000).Google Scholar
3 Kim, W. Y., Tasaki, H., Konagai, M., and Takahashi, K., J. Appl. Phys. 61, 3071 (1987).Google Scholar
4 Lee, C. H. and Lim, K. S., Appl. Phys. Lett. 72, 106 (1998).Google Scholar
5 Han, S. C., Shin, W. S., Seo, M. S., Gupta, D., Moon, S. J. and Yoo, S., Organic Electronics 10, 791 (2009).Google Scholar
6 Cho, H. S., Yun, C. H., Park, J. W. and Yoo, S., Organic Electronics 10, 1163 (2009).Google Scholar
7 Krc, J., Zeman, M., Kluth, O., Smole, F. and Topic, M., Thin Solid Films 451, 298 (2004).Google Scholar
8 Itoh, K., Matsumoto, H., Kobata, T. and Fujishima, A., Appl. Phys. Lett. 51, 1685 (1987).Google Scholar
9 Son, M. J., Kim, S. H., Kwon, S. N. and Kim, J. W., Organic Electronics 10, 637 (2009).Google Scholar
10 Benci, S., Manfredi, M. and Salviati, G. C., Solid State Communication 33, 107 (1980).Google Scholar
11 Mott, N. F., J. Non-Cryst. Solids. 1, 1 (1968).Google Scholar
12 Bechinger, C., Herminghaus, S. and Leiderer, P., Thin Solid Films 239, 156 (1994).Google Scholar
13 Mott, N. F. and Davis, E. A., Electronic Processes in Non-Crystalline Materials (Oxford University Press, London, 1979).Google Scholar
14 Heinz, B., Merz, M., Widmayer, P. and Ziemann, P., J. Appl. Phys. 90, 4007 (2001).Google Scholar
15 Lu, Y. F. and Qiu, H., J. Appl. Phys. 88, 1082 (2000).Google Scholar