Skip to main content Accessibility help
×
Home

Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping

  • Lianshan Wang (a1), Soo Jin Chua (a1) and Wenhong Sun (a1)

Abstract

Absratct:

The effects of isoelectronic In-doping were studied on the structural and optical properties of 3-periods and 10-periods of GaN/Al0.10Ga0.90N multi quantum wells (MQWs). The GaN/Al40.10Ga0.90N MQWs were grown on u-GaN/sapphire via metalorganic chemical deposition (MOCVD) at 1050°C in H2 carrier gas. X-ray diffraction (XRD), and micro-Photoluminescence (PL) measurements revealed that In-doping into well layers improves the crystalline and optical properties of MQWs relative to those samples without In-doping. With increasing Trimethylindium (TMIn) flow rates from 4.2 mol/min to 42.6 mol/min, PL peaks from well layers obviously redshifted, due to the improvement of the strain along the interfaces between MQWS, irrespective of 3-periods or 10 periods MQWs. The improvement of the crystal quality was also confirmed by XRD.

Copyright

References

Hide All
1. Nakamura, S., Fasol, G., “The blue laser diode”, Springer (Berlin), 1997
2. Marchand, H., Wu, X. H., Ibbetson, J. P., Fini, P. T., Kozodoy, P., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K., Appl. Phys. Lett. 73 747 (1998)
3. Amano, H., Iwaya, M., Kashima, T., Katsuragawa, M., Akasaki, I., Han, J., Hearne, S., Floro, J. A., Chason, E. and Figiel, J., Jpn. J. Appl. Phys. 37, L1540 (1998)
4. Shen, Xu-Qiang and Aoyagi, Y., Jpn. J. Appl. Phys. 38, L14 (1999)
5. Shu, C. K., Ou, J., Lin, H. C., Chen, W. K., Lee, M. C., Appl. Phys. Lett. 73, 641 (1998)
6. Widmann, F., Daudin, B., Feuillet, G., Pelekanos, N., Rouviére, J. L., Appl. Phys. Lett. 73, 2642 (1998)
7. Foxon, C., Hooper, S. E., Cheng, T. S., Orton, J. W., Ren, G. B., Ber, B. Ya, Merkulov, A. V., Novikov, S. V., and Tret'yakov, V. V., Semicond. Sci. Technol. 13, 1469 (1998)
8. Zeng, K. C., Li, J., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett., 76, 3040 (2000)
9. Im, Jin Seo, Kollmer, H., Off, J.. Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B57, R9435 (1998)
10. Kim, H. S., Lin, J. Y., Jiang, H. X., Chow, W. W., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 73, 3426 (1998)
11. Shan, W., Schmidt, J. J., Yang, X. H., Hwang, S. J., Song, J. J., Goldenberg, B., Appl. Phys. Lett. 66, 985 (1995)
12. Chung, B. C., and Gershenzon, M., J. Appl. Phys. 72, 651 (1992)
13. Ben, B. G., Orton, J. W., Cheng, T. S., Dewsbip, D. J., Lacklison, D. E., Foxon, C. T., Malloy, C. H., and Chen, X., MRS Internet J. Nitride Semicond. Res. 1, Article 22 (1996).
14. Fischer, S., Wetzel, C., Walukiewicz, W., and Haller, E. E., Mater. Res. Sco. Symp. Proc. 395, 571 (1996)
15. Eckey, L., Hoffmann, A., Heitz, R., Broser, I., Meyer, B. K., Detchprohm, T., Hiramatsu, K., Amano, H., and Akasaki, I., Mater. Res. Sco. Symp. Proc. 395, 589 (1996)
16. Rieger, W., Dimitrov, R., Brunner, D., Rohrer, E., Ambacher, O., and Stutzmann, M., Phys. Rev. B54, 17596 (1996)

Related content

Powered by UNSILO

Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping

  • Lianshan Wang (a1), Soo Jin Chua (a1) and Wenhong Sun (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.