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Improvement of Minority-Carrier Properties of GaAs on Si

  • S.M. Vernon (a1), R.K. Ahrenkiel (a2), M.M. Al-Jassim (a2), T.M. Dixon (a1), K.M. Jones (a2), S.P. Tobin (a1) and N.H. Karam (a1)...

Abstract

GaAs-on-Si structures have been grown by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD); in some samples, the GaAs nucleation layer was deposited by atomic layer epitaxy (ALE). Material quality has been characterized by Nomarski microscopy, time-resolved photoluminescence, trans- mission electron microscopy, and the performance of photovoltaic devices. The minority-carrier lifetime has been correlated with defect density and growth parameters. The use of a thermal-cycle-growth technique is seen to be a major factor in improving GaAs-on-Si material quality without resorting to the use of thick buffer layers.

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1.For a review see “Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices,” ed. by Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J., Mater. Res. Soc. Symp. Proc. 116 (Reno, NV 1989) pp. 179282.
2. Bedair, S.M., Mcdermott, B.T., Ide, Y., Tischler, M.A., Karam, N.H., and El-Masry, N.A., Proc. 4th Intern. Conf. on MOVPE (Japan 1988) in press.
3. Karam, N.H., Haven, V.E., Vernon, S.M., Tran, J.C., and El-Masry, N.A., paper A6.1 at MRS Spring Meeting, San Diego, CA, April 1989(to be published).
4. Ahrenkiel, R.K., Dunlavy, D.J., and Hanak, T., J. Appl. Phys. (in press) 1989.
5. Tobin, S.P., S.M. Vernon, Haven, V.E., Bajgar, C., Pearton, S.J., and Sanfacon, M.M., Conf. Rec. of 19th IEEE Photov. Spec. Conf. (New Orleans, May 1987), p. 113.
6. Pearton, S.J., Abernathy, C.R., Caruso, R., Vernon, S.M., Short, K.T., Brown, J.M., Chu, S.N.G., Stavola, M., and Haven, V.E., J. Appl. Phys. 63, 775 (1988).
7. Ahrenkiel, R.K., Al-Jassim, M.M., Dunlavy, D.J., K.M. Jones, Vernon, S.M., Tobin, S.P., and Haven, V.E., Appl. Phys. Lett. 53, 222 (1988).
8. Ahrenkiel, R.K., Dunlavy, D.J., Keyes, B., Vernon, S.M., Dixon, T.M., Miller, K.L., and Hayes, R.E., submitted to Appl. Phys. Lett. April, 1989.
9. Tobin, S.P., 4th Intern. Photovolt. Sci. & Eng. Conf., Sydney, Australia, Feb. 1989 (to be published).

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Improvement of Minority-Carrier Properties of GaAs on Si

  • S.M. Vernon (a1), R.K. Ahrenkiel (a2), M.M. Al-Jassim (a2), T.M. Dixon (a1), K.M. Jones (a2), S.P. Tobin (a1) and N.H. Karam (a1)...

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