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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
Published online by Cambridge University Press: 10 February 2011
Abstract
In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGalxN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AIN interlayers on the structural quality of group III nitrides is discussed.
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- Copyright © Materials Research Society 1999