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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

  • H. Amano (a1), M. Iwaya (a1), N. Hayashi (a1), T. Kashima (a1), M. Katsuragawa (a1), T. Takeuchi (a1), C. Wetzel (a1) and I. Akasaki (a1)...

Abstract

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGalxN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AIN interlayers on the structural quality of group III nitrides is discussed.

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