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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

  • H. Amano (a1), M. Iwaya (a1), N. Hayashi (a1), T. Kashima (a1), M. Katsuragawa (a1), T. Takeuchi (a1), C. Wetzel (a1) and I. Akasaki (a1)...


In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGalxN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AIN interlayers on the structural quality of group III nitrides is discussed.



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1. Maruska, H. P. and Tietjen, J. J., Appl. Phys. Lett., 15, 327 (1969).
2. Pankove, J. I., Miller, E. A., Richman, D. and Berkeyheiser, J. E., J. Lumin., 4, 63 (1971).
3. Monemar, B., Phys. Rev. B10, 676 (1974).
4. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).
5. Nakamura, S., Mukai, T. and Senoh, M.: J. Appl. Phys. 71, 5543 (1992).
6. Amano, H., Kito, M., Hiramatsu, K., Sawaki, N. and Akasaki, I., Jpn. J. Appl. Phys., 28, L2112 (1989).
7. Nakamura, S., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys., 30, L1708 (1992).
8. Akasaki, I., Proc. Mater. Res. Soc. 482, 3 (1998).
9. Lester, S. D., Ponce, F. A., Craford, M. G. and Steigerwald, D. A., Appl. Phys. Lett., 66, 1249 (1995).
10. Ning, X. J., Chien, F R., Pirouz, P., Yang, J. W. and Khan, M. A., J. Mater. Res., 11, 580 (1996).
11. Sugahara, T., Sato, H., Hao, M., Naoi, Y., Kurai, S., Tottori, S., Yamashita, K., Nishino, K., Romano, L. T. and Sakai, S., Jpn. J. Appl. Phys., 37, L398 (1998).
12. Eastman, L., Chu, K., Schaff, W., Murphy, M. and Weimann, N. G., Internet J. of Nitride Semiconductor Re, 2, 17 (1997).
13. Iwaya, M., Takeuchi, T., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I., Jpn..J. Appl. Phys. 37, L316 (1998).
14. Iwaya, M., Hayashi, N., Takeuchi, T., Kashima, T., Katsuragwa, M., Kato, H., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. (to be submitted).
15. Amano, H., Iwaya, M., Kashima, T., Katsuragawa, M., Akasaki, I., Han, J., Hearne, S., Floro, J. A., Chason, E. and Figiel, J., Jpn. J. Appl. Phys., 37, (1998) L1540.
16. Hirosawa, K., Hiramatsu, K., Sawaki, N. and Akasaki, I., Jpn. J. Appl. Phys., 32, L1039 (1993).
17. Floro, J., Chason, E., Lee, S., Twesten, R., Hwang, R. and Freud, L., J. Electron. Mater., 26, 969 (1997).
18. Hearne, S., Chason, E., Han, J., Floro, J., Figiel, J., Hunter, J., Amano, H. and Tsong, I., Appl. Phys. Lett., (to be published).


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