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Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications

  • H. Grüger (a1), Ch. Kunath (a1), E. Kurth (a1), W. Pufe (a1) and S. Sorge (a1)...

Abstract

Hafnium dioxide HfO2 is a candidate with promising properties for semiconductor industries as well as for optical and sensorial applications under harsh environments. The material can be deposited using various techniques such as CVD or PVD in different thickness ranges. The chemical inertness of HfO2 and the high band gap draw the attention of this paper towards application in optics as active and protective layer at the same time, chemical and physical sensors, such as moisture sensors and thin film capacities. In order to improve the layer properties with the sensorial application in mind, the deposition process and the post-processing need to be tightly controlled.

Layers with thicknesses between 100 and 150nm have been deposited by r.f. sputtering of a high purity HfO2 target onto bare or oxidized silicon wafers under Ar- or Ar/O2-athmospheres. Initially the HfO2 has a mainly amorphous structure. Subsequent annealing controls the growth of recrystallized areas characterized by grain size and ratio between crystals and amorphous bodies. High heating rates of about 50K/s and annealing temperatures ranging 800 to 1000°C in a rapid thermal annealing (RTA) chamber seem to be advantageous for the properties desired. The layer's structure such as grain size, crystal type and orientation was investigated using AFM, TEM and XRD. Layer tension was evaluated using laser deflection. The differences in structure found have been correlated to the chemical inertness obtained in measurements for layer applications.

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[1] Gua, S., Cartier, E., Bojarczuk, N. A., Bruley, J., Gignac, L, Karasinski, J., “High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic beam deposition”, J. Appl. Phys. 90 (2001) 512
[2] Jonsson, A. K., Niklasson, G. A., Veszelei, M., “Electrical properties of ZrO2 thin films”, Thin Solid Films 402 (2002) 242247
[3] Chang, J. P., Lin, Y.-S.Highly conformal ZrO2 deposition for dynamic random access memory application”, J. Appl. Phys. 90 (2001) 6, 2964–2969
[4] Cho, M.-H., Ko, D.-H., Choi, Y. K., Lyo, I. W., Jeong, K., Whang, C. N., “Epitaxial Y2O3 film growth on am oxidized Si surface”, Thin Solid Films 402 (2002) 3842
[5] Hussain, Z., “Optical and electronchromic properties of heated and annealed MoO3 thin films”, J. Mater. Res. 16(2001)9, 26952708
[6] Campbell, S. A., Kim, H.-S., Gilmer, D. C., He, B., Ma, T., Gladfelter, M. L., “Titanium dioxide (TiO2)-based gate insulators”, IBM J. Res. Develop, 43(1995)3, 383392
[7] Regraguui, M., Jousseaume, V., Addou, M., Outzourhit, A., Bernéde, J., Idrissi, B., “Electrical and optical properties of WO3 thin films”, Thin solid Films 397 (2001) 238243
[8] Grüger, H., Kunath, Ch., Kurth, E., Sorge, S., Pufe, W., Pechstein, T., “High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing“, Thin solid films, in press (2003)
[9] Hornbogen, E., Warlimont, H., Metallkunde, Kap. 2, Springer Verlag, Berlin, Heidelberg, New York, 3rd Edition, 1996
[10] Gmelins Handbuch der anorganischen Chemie, Bandreihe Hf
[11] Cho, M., Roh, Y.S., Wang, C.N., Jeong, K., Nahm, S.W., Ko, D.-H., Lee, J.H., Lee, N.I., Fujihara, K., “Thermal stability and structural characteristics of HfO2 thin films on Si (100) grown by atomic layer deposition”, Appl. Phys. Lett. Vol. 81 No. 3 (2002) 472474
[12] Kuo, C. T., Kwor, R., Jones, K. M., “Study of sputtered HfO2 thin films on silicon“, Thin Solid Films 213 (1992) 257264
[13] Manory, R., Mori, T., Shimizu, I., Miyake, S., “Growth and structure control of HfO2-x films with cubic and tetragonal structures obtained by ion beam assisted deposition”, J. Vac. Sci. Technol. A 20 (2002)2, 549554
[14] Miyata, N., Ichikawa, M., Nabatame, T., Horikawa, T., Toriumi, A., “Thermal stability of a thin HfO2 / ultrathin SiO2 / Si Structure: Interfacial Si oxidation and silicidation”, Jpn. J. Appl. Phys. Vol. 42 (2003) L138-L140

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Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications

  • H. Grüger (a1), Ch. Kunath (a1), E. Kurth (a1), W. Pufe (a1) and S. Sorge (a1)...

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