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Improved properties of TaOx films doped with Al and N

  • R. B. van Dover (a1), L. F. Schneemeyer (a1), R. M. Fleming (a1) and D. J. Werder (a1)

Abstract

Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with ∼2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of ∼750 individual capacitors in each experiment.

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Improved properties of TaOx films doped with Al and N

  • R. B. van Dover (a1), L. F. Schneemeyer (a1), R. M. Fleming (a1) and D. J. Werder (a1)

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