Hostname: page-component-7bb8b95d7b-w7rtg Total loading time: 0 Render date: 2024-09-19T12:34:15.443Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved process window using low-carbon Gexsil-x-yCyEpitaxial layers

Published online by Cambridge University Press:  10 February 2011

A. Mocuta ,
D.W. Greve  and
R.M. Strong
A. Mocuta
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University
D.W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University
R.M. Strong
Affiliation:
Northrop Grumman, Pittsburgh, PA
Get access

Abstract

Processing of silicon-based heterojunction devices is severely constrained by the relaxation of strained epitaxial layers. Generally the equilbrium critical thickness cannot be exceeded if high-temperature process steps such as oxidation and diffusion are performed. In this paper, we report on the beneficial effects of small amounts of carbon ( 0.2%) added to germanium-silicon epitaxial layers. We will show that such low concentrations result in a substantial decrease of boron diffusivity and strain relaxation. We will also report on the fabrication of GexSil-x-yCy heterostructure MOS capacitors with a channel thickness of 300 A° and a maximum germanium fraction of 50% A thermal oxidation at 800 ‘C was performed resulting in good C(VG) characteristics along with improved hole confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 287
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iyer, S.S., Eberl, K., Goorski, M.S., LeGoues, F.K., Tsang, J.C. and Cardone, F., Appl. Phys. Lett. 60, 356 (1992).Google Scholar
2. Bodnar, S and Regolini, J.L., J. Vac. Sci. Technol. A13, 2336 (1995).Google Scholar
3. Amour, A. St., Liu, C.W., Sturm, J.C., Lacroix, Y., Thewalt, M.L.W., Appl. Phys. Lett. 67, 3915 (1995).Google Scholar
4. Lanzerotti, L.D., Amour, A. St., Liu, C.W., Sturm, J.C., Lacroix, Y., Watanabe, J.K., Theodore, N.D., IEEE Electron Device Letters EDL–17, 334 (1996).Google Scholar
5. Riley, T.J., Gelpey, J.C., Roozeboom, F., Saito, S., Rapid Thermal and Integrated Processing VI, p. 109–14 (The Materials Research Society, Pittsburgh, PA, 1997).Google Scholar
6. Lanzerotti, L. D. and Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T. and Magee, C., Appl. Phys. Lett. 70 (1997).Google Scholar
7. Mocuta, A.C. and Greve, D.W., (submitted to the Journal of Vacuum Science and Technology).Google Scholar
8. Mocuta, A.C. Greve, D.W., (Journal of Applied Physics, to be published).Google Scholar
9. Christopherson, J. C., Atwater, H. A., to be published in Epitaxy and Applications of Si Based Heterostructures Symposium Proceedings (Materials Research Society, Pittsburgh PA) vol.533.Google Scholar