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Improved Optical Quality of BAlGaN/AlN MQW Structure Grown on 6H-SiC Substrate by Controlling Residual Strain Using Multi-Buffer Layer

  • Takayoshi Takano (a1), Hideo Kawanishi (a1), Makoto Kurimoto (a1), Yoshiyuki Ishihara (a1), Masato Horie (a1) and Jun Yamamoto (a1)...

Abstract

BAlGaN and (BAlGaN/AlN) multi-quantum-wells (MQWs) structure were grown on 6H-SiC substrate by a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). Estimated boron compositions of the BAlGaN quantum wells by an Auger electron spectroscopy (AES) analysis were 0% to 13%. Photoluminescence (PL) spectra around 260 nm were observed at room temperature. The full-width at half maximum (FWHM) of PL spectra for BAlGaN/AlN MQW structure(with 2% of boron) was narrowed from 360 meV to 179 meV, as the residual strain in the BAlGaN well layer was decreased from 1.3% to 1.0% by increasing the Al content in the quantum wells.

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