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Improved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique

Published online by Cambridge University Press:  01 February 2011

Dai Okamoto ,
Hiroshi Yano ,
Shinya Kotake ,
Kenji Hirata ,
Tomoaki Hatayama  and
Takashi Fuyuki
Dai Okamoto
Affiliation:
o-dai@ms.naist.jp, Nara Institute of Science and Technology, Ikoma, Japan
Hiroshi Yano
Affiliation:
h-yano@ms.naist.jp, Nara Institute of Science and Technology, Ikoma, Nara, Japan
Shinya Kotake
Affiliation:
k-shinya@ms.naist.jp, Nara Institute of Science and Technology, Ikoma, Nara, Japan
Kenji Hirata
Affiliation:
hi-kenji@ms.naist.jp, Nara Institute of Science and Technology, Ikoma, Nara, Japan
Tomoaki Hatayama
Affiliation:
hatayama@ms.naist.jp, Nara Institute of Science and Technology, Ikoma, Nara, Japan
Takashi Fuyuki
Affiliation:
fuyuki@ms.naist.jp
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Abstract

We propose a new technique to fabricate 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO2/4H-SiC(0001) interface by post-oxidation annealing using phosphoryl chloride (POCl3). The interface state density at 0.2 eV from the conduction band edge was reduced to less than 1 × 1011 cm−2eV−1 by the POCl3 annealing at 1000 °C. The peak field-effect mobility of 4H-SiC MOSFETs on (0001) Si-face processed with POCl3 annealing at 1000 °C was approximately 90 cm2/Vs. The high channel mobility is attributed to the reduced interface state density near the conduction band edge.

Keywords

oxidationPsecondary ion mass spectroscopy (SIMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B06-06
Copyright
Copyright © Materials Research Society 2010

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