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Improved interface between front TCO and microcrystalline silicon p-i-n solar cells.

  • E. Vallat-Sauvain (a1), S. Faÿ (a1), S. Dubail (a1), J. Meier (a1), J. Bailat (a1), U. Kroll (a1) and A. Shah (a1)...

Abstract

The microstructure of microcrystalline silicon p-layers on zinc oxyde (ZnO) has been studied by Transmission Electron Microscopy (TEM). ZnO has been characterised by X-Rays diffraction and by Scanning Electron Microscopy (SEM). These reveal that the ZnO surface topography consists of regular pyramids with a (110) preferential crystallographic growth axis. High Resolution TEM observations indicate that the p- layer growth starts at the top of the ZnO pyramids. This results, for fully microcrystalline p-layers, in a decreased thickness at the bottom of the ZnO pyramids. When the p-layer is fully microcrystalline, no amorphous incubation layer could be observed between ZnO and p-silicon layer. Moreover, the high crystallinity of the p-layers in microcrystalline p-i-n devices is accompanied by an increased fill-factor in the I-V characteristics.

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Improved interface between front TCO and microcrystalline silicon p-i-n solar cells.

  • E. Vallat-Sauvain (a1), S. Faÿ (a1), S. Dubail (a1), J. Meier (a1), J. Bailat (a1), U. Kroll (a1) and A. Shah (a1)...

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