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Improved Efficiency in Hydrogenated Amorphous Silicon Solar Cells Irradiated by Excimer Laser

Published online by Cambridge University Press:  01 February 2011

A. A. Damitha ,
T. Adikaari ,
S. Ravi ,
P. Silva ,
Michael J. Kearney  and
John M. Shannon
A. A. Damitha
Affiliation:
Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom.
T. Adikaari
Affiliation:
Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom.
S. Ravi
Affiliation:
Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom.
P. Silva
Affiliation:
Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom.
Michael J. Kearney
Affiliation:
Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom.
John M. Shannon
Affiliation:
Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom.
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Abstract

Excimer laser crystallisation is used to fabricate nanocrystalline thin film silicon Schottky barrier solar cells, in a superstrate configuration with indium tin oxide as the front contact and chromium as the back contact. 150 nm thick intrinsic absorber layers are used for the solar cells, and was crystallised using an excimer laser with different laser energy densities. These layers were characterised using Raman spectroscopy and optical absorption before device fabrication. External quantum efficiencies of the devices were calculated from the spectral response data of the devices. A maximum efficiency of 70 % is observed for low energy irradiation, which is significant for very thin absorber layers. Device operation is discussed with proposed band structures for the devices and supplementary measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L8.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Brotherton, S. D., McCulloch, D. J., Clegg, J. B. and Gowers, J. P., IEEE Trans. Electron Devices, 40, 407 (1993).Google Scholar
2. Brotherton, S. D., Semiconductor Science and Technology, 10, 721 (1995).Google Scholar
3. Brotherton, S. D., McCulloch, D. J., Gowers, J. P., Ayres, J. R. and Trainor, M. J., J. Appl. Phys. 82, 4086 (1997).Google Scholar
4. Mei, P., Boyce, J. B., Hack, M., Lujan, R. A., Johnson, R. I., Anderson, G. B., Fork, D. K. and Ready, S. E., Appl. Phys. Lett. 64, 1132 (1994).Google Scholar
5. Azuma, H., Takeuchi, A., Ito, T., Fukushima, H., Motohiro, T. and Yamaguchi, M. Solar Energy Materials & Solar Cells, 74, 289 (2002).Google Scholar
6. Yamamoto, K., Nakashima, A., Suzuki, T., Yoshimi, M., Nishio, H. and Izumina, M., Jpn. J. Appl. Phys. 33, L1751 (1994).Google Scholar
7. Yeh, Wen-Chang and Matsumura, M., Jpn. J. Appl. Phys., 38, L110 (1999).Google Scholar
8. Im, J.S., Kim, H. J. and Thompson, M. O., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
9. Thompson, M. O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).Google Scholar
10. Voustas, A. T., Applied surface science, 208–209, 250 (2003).Google Scholar
11. Smit, C., van Swaaij, R. A. C. M. M., Donker, H. and Petit, A. M. H. N., Kessels, W. M. M., and van de Sanden, M. C. M., J. Appl. Phys., 94, 3582 (2003).Google Scholar
12. Tsu, R., Gonzalez-Hernandez, J., Chao, S. S., Lee, S. C., and Tanaka, K., Appl. Phys. Lett. 40, 534 (1982).Google Scholar
13. Park, Y., Choong, V., Gao, Y., Hsieh, B. R., and Tang, C. W., Appl. Phys. Lett. 68, 2699 (1996).Google Scholar
14. Kanicki, Jerzi, Appl. Phys. Lett. 53, 1943 (1988).Google Scholar
15. Kim, H., Gilmore, C. M., Piqué, A., Horwitz, J. S., Mattoussi, H., Murata, H., Kafafi, Z. H., and Chrisey, D. B., J. Appl. Phys., 86, 6451 (1999).Google Scholar
16. Gutkowicz-Krusin, D., Wronski, C. R., and Tiedje, T., Appl. Phys. Lett. 38, 87 (1981).Google Scholar