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Implanted Impurity Incorporation and Segregation Phenomena Induced by PEBA in Silicon

Published online by Cambridge University Press:  25 February 2011

G. Chaussemy ,
D. Barbier  and
A. Laugier
G. Chaussemy
Affiliation:
Laboratoire de Physique de la Matière (LA CNRS n° 358), Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein 69621 Villeurbanne Cédex France
D. Barbier
Affiliation:
Laboratoire de Physique de la Matière (LA CNRS n° 358), Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein 69621 Villeurbanne Cédex France
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière (LA CNRS n° 358), Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein 69621 Villeurbanne Cédex France
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Abstract

In this work, the PEBA induced thermal effects have been varied to study the diffusion of usual implanted impurities (P, As, Sb, In) and segregation phenomena in (100) and (111) silicon. The mean melt-front velocity has been adjusted between 1 and 4 m/s by modifying both the beam fluence and the sample starting temperature. A model for dopant redistribution has been developped, using a mean diffusion coefficient D and solving the one dimensional Fick's equation. Segregation and dopant evaporation are considered and introduced as limit conditions at the liquid-solid interface and at the wafer surface respectively. The impurity redistribution has been experimentally studied by SIMS profiling ; so that interfacial segregation coefificient Ki may be deduced from comparison between experimental and computed profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 257
Copyright
Copyright © Materials Research Society 1985

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References

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