Skip to main content Accessibility help
×
Home

Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs

  • S. DasGupta (a1), M. Sun (a2), A. Armstrong (a1), R. Kaplar (a1), M. Marinella (a1), J. Stanley (a1), M. Smith (a1), S. Atcitty (a1) and T. Palacios (a2)...

Abstract

Charge trapping and slow (10 s to > 1000 s) detrapping in AlGaN/GaN HEMTs designed for high breakdown voltage (> 1500 V) are studied to identify the impact of Al molefraction and passivation on trapping. Two different trapping components, TG1 (Ea = 0.62 eV) and TG2 (with negligible temperature dependence) in AlGaN dominate under gate bias stress in the off-state. Al0.15Ga0.85N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under illumination by monochromatic light shows TD to have Ea ≈ 1.65 eV in Al0.26Ga0.74N and Ea ≈ 1.85 eV in Al0.15Ga0.85N. This is consistent with a transition from a deep state (Ec - 2.0 eV) in the AlGaN barrier to the 2DEG.

Copyright

References

Hide All
1. Lu, B. and Palacios, T., IEEE Electron Dev. Lett., 31(9), 951, (2010).
2. Wu, Y.-F., Mitos, M. J., Moore, M. L., and Heikman, S., IEEE Electron Dev. Lett., 29(8), 824, (2008).
3. Joh, J. and del Alamo, J. A., IEDM Technical Digest, 461 (2008).
4. Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U. K., Canali, C., and Zanoni, E., IEEE Trans. Electron Devices, 51(10) 1554, (2004).
5. Vetury, R., Zhang, N. Q., Keller, S., and Mishra, U. K., IEEE Trans. Electron Devices, 48(3), pp. 560566, (2001).
6. Koley, G., Tilak, V., Eastman, L. F., and Spencer, M. G., IEEE Trans. Electron Devices, 50(4), 886, (2003).
7. Joh, J. and del Alamo, J.A., IEEE Trans. Electron Devices, 58(1), 132, (2011).
8. Nam, K. B., Nakarmi, M. L., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett., 86(22), 22108, (2005).
9. Henry, T. A., Armstrong, A., Allerman, A. A., Crawford, M. H., Appl. Phys. Lett., 100(4), 043509, (2012).
10. Pankove, J. I., and Schade, H., Appl. Phys. Lett., 25, 53, (1974).
11. Armstrong, A., Chakraborty, A., Speck, J. S., DenBaars, S. P., Mishra, U. K., and Ringel, S. A., Appl. Phys. Lett. 89, 262116 (2006).

Keywords

Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs

  • S. DasGupta (a1), M. Sun (a2), A. Armstrong (a1), R. Kaplar (a1), M. Marinella (a1), J. Stanley (a1), M. Smith (a1), S. Atcitty (a1) and T. Palacios (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed