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Impact of Post Deposition Annealing on Characteristics of HfxZr1-xO2

  • Dina Triyoso (a1), Rama H. Hegde (a2), Rich Gregory (a3), Greg S. Spencer (a4) and William Taylor (a5)...

Abstract

In this paper the impact of post deposition annealing in various ambient on electrical properties of hafnium zirconate (HfxZr1-xO2) high-k dielectrics is reported. ALD HfxZr1-xO2 films are annealed in a nitrogen and/or oxygen ambient at 500°C to 1000°C. Devices annealed at 500°C in N2 has lower equivalent oxide thickness (EOT) of 10Å without significant increase in gate leakage (Jg), threshold voltage (Vt) and only a slight decrease in transconductance (Gm) values compared to 500°C O2 annealed devices. Furthermore, the impact of annealing HfxZr1-xO2 films in a reducing ambient (NH3) is studied. Optimized NH3 anneal on HfxZr1-xO2 results in lower CET, improved PBTI, low sub-threshold swing values, comparable high-field Gm with only a minor degradation in peak Gm compared to control HfxZr1-xO2. Finally, the impact of laser annealing vs. RTP annealed HfxZr1-xO2 films are reported. Laser annealing helped further stabilize tetragonal phase of HfxZr1-xO2 without inducing void formation. Good devices with low leakage, low EOT and high mobility are obtained for laser annealed HfxZr1-xO2.

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1 Triyoso, D.H., Hegde, R.I., Schaeffer, J.K., Roan, D., Tobin, P.J., Samavedam, S.B., White, B.E., Gregory, R., and Wang, X.-D., Appl. Phys. Lett. 88, 222901 (2006).
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6 Triyoso, D.H., Tobin, P.J., White, B.E. Jr. , Gregory, R., and Wang, X.D., Appl. Phys. Lett. 89, 132903 (2006).
7 Lysaght, P.S., Foran, B., Bersuker, G., Chen, P.J., Murto, R.W., and Huff, H.R., Appl. Phys. Lett. 82 1266 (2003).
8 Hegde, R.I and Triyoso, D.H., J. App. Phys. 104 p.094110–8 (2008).
9 Triyoso, D.H., Spencer, G., Hegde, R.I., Gregory, R, Wang, X. D, Appl. Phys. Lett. 92 113501–1 (2008).

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Impact of Post Deposition Annealing on Characteristics of HfxZr1-xO2

  • Dina Triyoso (a1), Rama H. Hegde (a2), Rich Gregory (a3), Greg S. Spencer (a4) and William Taylor (a5)...

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