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Impact of Boron and Gallium on Defects Production in Silicon

  • Aurangzeb Khan (a1), Nethaji Dharmarasu (a1), Masafumi Yamaguchi (a1), Kenji Araki (a1), Tuong K. Vu (a1), Tatsuo Saga (a2), Takao Abe (a3), Osamu Annzawa (a4), M. Imaizumi (a4) and Sumio Matsuda (a4)...

Abstract

We report the results of comparison of radiation-induced defects (1 MeV electrons) in n+-p-p+ Si diodes doped with gallium or boron ranging in concentration from 8 × 1014 to 5 × 1016 cm−3, together with the impact of oxygen on radiation –induced defects. Present results provide evidence for new defects states in addition to those previously reported in gallium- and boron-doped Si. The combined boron and gallium data provide enough information to gain valuable insight into the role of the dopants on radiation-induced defects in Si. The interesting new future of our results is that the gallium appears to strongly suppress the radiation induced defect, especially hole level EV+0.36 eV, which is thought to act as a recombination center. Similarly the dominant electron level at EC-0.18 eV in B-doped Si (which act as a donor) has not been observed in Ga-doped CZ-grown Si.

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Impact of Boron and Gallium on Defects Production in Silicon

  • Aurangzeb Khan (a1), Nethaji Dharmarasu (a1), Masafumi Yamaguchi (a1), Kenji Araki (a1), Tuong K. Vu (a1), Tatsuo Saga (a2), Takao Abe (a3), Osamu Annzawa (a4), M. Imaizumi (a4) and Sumio Matsuda (a4)...

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