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Impact of a-Si:H structural properties on the annealing behavior of a-Si:H/c-Si heterostructures used as precursors for high-efficiency solar cells

  • Tim Ferdinand Schulze (a1), Hannes Ner Beushausen (a2), Caspar Leendertz (a3), Anja Dobrich (a4), Thomas Hannappel (a5), Lars Korte (a6) and Bernd Rech (a7)...

Abstract

We analyze the dependence of the interface defect density Dit in amorphous/crystalline (a-Si:H/c-Si) heterostructures on the microscopic properties of the ultrathin (10nm) undoped a-Si:H films. It is shown that the hydrogen bonding configuration, probed by infrared spectroscopy, determines the a-Si:H network disorder, which in turn governs the annealing behavior of these structures upon a short thermal treatment at moderate temperatures (T ≤ 200°C). While the as-deposited Dit seems to be determined by the local structure at the interface, the final state of the annealed samples is determined by the bulk a-Si:H network strain as reflected in the valence band tail slope. Thus it appears valid to treat the equilibrated a-Si:H/c-Si interface as a 2D-layer that has the projected defect properties of the 3D a-Si:H bulk.

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Keywords

Impact of a-Si:H structural properties on the annealing behavior of a-Si:H/c-Si heterostructures used as precursors for high-efficiency solar cells

  • Tim Ferdinand Schulze (a1), Hannes Ner Beushausen (a2), Caspar Leendertz (a3), Anja Dobrich (a4), Thomas Hannappel (a5), Lars Korte (a6) and Bernd Rech (a7)...

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