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Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

Published online by Cambridge University Press:  21 February 2011

S. J. Chang ,
K. Takahei ,
J. Nakata  and
Y. K. Su
S. J. Chang
Affiliation:
Departmento f Electrical EngineeringNational Cheng Kung University, Tainan, Taiwan, ROC NTT Basic Research Laboratories, Musashino-Shi, Tokyo, Japan
K. Takahei
Affiliation:
NTT Basic Research Laboratories, Musashino-Shi, Tokyo, Japan
J. Nakata
Affiliation:
NTT LSI Laboratories, Atsugi-shi, Kanagawa, Japan
Y. K. Su
Affiliation:
Departmento f Electrical EngineeringNational Cheng Kung University, Tainan, Taiwan, ROC
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Abstract

We report the first study of impact excitation of Er ions in GaAs. The MOCVDgrown, p+-n structured EL devices were fabricated by growing, at different temperatures, GaAs:Er layers on top of the n+ GaAs substrates. P+ layers were made by Zn diffusion from the top surfaces. When we forward biased these diodes, their EL spectra were similar to their respective PL spectra for each sample but different from each other's. However, when we reverse biased these diodes, EL spectra obtained from all samples are the same, which were different from their PL spectra. These results indicate that the Er center(s) excited by direct impact is different from the Er center(s) excited through electron-hole recombination and subsequent energy transfer. By using RBS channeling, we found that most of the Er ions, in our MOCVD-grown GaAs:Er samples, occupy a displaced tetrahedral interstitial site. From these PL, EL and RBS results, we conclude that only a small amount of Er ions emit luminescence when they are indirectly excited through energy transfer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 299
Copyright
Copyright © Materials Research Society 1993

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References

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