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Imaging of Buried Si and Si:Ge Surface Structure Under Amorphous Ge Films by Plan View Transmission Electron Microscopy

Published online by Cambridge University Press:  21 February 2011

Olof C. Hellman
Olof C. Hellman*
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, 305 Japan, and NTT Basic Research Laboratories, 3-9-11 Midori-cho, Musashino, Tokyo, 180, Japan
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Abstract

Real space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure at the amorphous-Ge / Si (111) interface is presented. Ge is deposited at between room temperature and 150°C on either a 5×5 or 7×7 reconstructed surface. Conventional Plan-view TEM analysis reveals microstructural details such as surface steps, reconstruction phase shift boundaries and the reconstruction itself buried under the amorphous film, features which have previously been seen only as clean surfaces in UHV. Also imaged are small regions where Ge grows epitaxially on the Si surface above room temperature. These are seen to appear preferentially at steps and phase shift boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 237
Copyright
Copyright © Materials Research Society 1994

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