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Image Sensors in Tfa Technology - Status and Future Trends

Published online by Cambridge University Press:  10 February 2011

M. Böhm
Affiliation:
Institut für Halbleiterelektronik (IHE), Universitäit-GH Siegen, 57068 Siegen, Germany Silicon Vision GmbH, 57078 Siegen, Germany
F. Blecher
Affiliation:
Institut für Halbleiterelektronik (IHE), Universitäit-GH Siegen, 57068 Siegen, Germany
A. Eckhardt
Affiliation:
Institut für Halbleiterelektronik (IHE), Universitäit-GH Siegen, 57068 Siegen, Germany
K. Seibel
Affiliation:
Institut für Halbleiterelektronik (IHE), Universitäit-GH Siegen, 57068 Siegen, Germany
B. Schneider
Affiliation:
Institut für Halbleiterelektronik (IHE), Universitäit-GH Siegen, 57068 Siegen, Germany
J. Sterzel
Affiliation:
Institut für Halbleiterelektronik (IHE), Universitäit-GH Siegen, 57068 Siegen, Germany
S. Benthien
Affiliation:
Silicon Vision GmbH, 57078 Siegen, Germany
H. Keller
Affiliation:
Silicon Vision GmbH, 57078 Siegen, Germany
T. Lulé
Affiliation:
Silicon Vision GmbH, 57078 Siegen, Germany
P. Rieve
Affiliation:
Silicon Vision GmbH, 57078 Siegen, Germany
M. Sommer
Affiliation:
Silicon Vision GmbH, 57078 Siegen, Germany
B. Van Uffel
Affiliation:
AGFA-Gevaert N.V., 2650 Edegem, Belgium
F. Librecht
Affiliation:
AGFA-Gevaert N.V., 2650 Edegem, Belgium
R. C. Lind
Affiliation:
Delphi Delco Electronics Systems, Malibu CA 90265, USA
L. Humm
Affiliation:
Delphi Delco Electronics Systems, Malibu CA 90265, USA
U. Efron
Affiliation:
Delphi Delco Electronics Systems, Malibu CA 90265, USA
E. Roth
Affiliation:
Daimler-Benz Aerospace Jena-Optronik GmbH, 07745 Jena, Germany
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Abstract

Image sensors in TFA (Thin Film on ASIC) technology have been successfully fabricated and tested. This paper provides a survey of TFA research results so far and outlines future perspectives. The properties of different a-Si:H b/w and color thin film detectors are evaluated, including spectral sensitivity, dark current, temperature influence and transient behavior. Furthermore several TFA prototypes and emerging concepts are presented, ranging from a simple one-transistor cell design to a locally autoadaptive sensor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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